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Detection of spin- and valley-polarized states in van der Waals materials via thermoelectric and non-reciprocal transport

Oladunjoye A. Awoga, Pauli Virtanen, Tero T. Heikkilä, Stefan Ilić

Abstract

We predict thermoelectric and current rectification effects in hybrid junctions formed by Ising superconductors and materials hosting valley-polarized states. Both effects originate from the interplay of intrinsic Ising spin-orbit coupling, spin-splitting from an exchange or Zeeman field, and valley polarization. The resulting transport signatures provide experimentally accessible probes of valley-polarized states in van der Waals heterostructures, such as junctions of few-layer transition metal dichalcogenides and twisted bilayer or rhombohedral graphene.

Detection of spin- and valley-polarized states in van der Waals materials via thermoelectric and non-reciprocal transport

Abstract

We predict thermoelectric and current rectification effects in hybrid junctions formed by Ising superconductors and materials hosting valley-polarized states. Both effects originate from the interplay of intrinsic Ising spin-orbit coupling, spin-splitting from an exchange or Zeeman field, and valley polarization. The resulting transport signatures provide experimentally accessible probes of valley-polarized states in van der Waals heterostructures, such as junctions of few-layer transition metal dichalcogenides and twisted bilayer or rhombohedral graphene.

Paper Structure

This paper contains 6 sections, 20 equations, 6 figures.

Figures (6)

  • Figure 1: Schematic illustration for probing Ising thermopower and rectification. (a) Junction between Ising SC and a spin- and valley-polarized material X with a tunnel barrier. The field $\boldsymbol{h}$, in the SC can be applied with an in-plane external field or via proximity effect with a ferromagnetic insulator. The probe can be an STM tip on which the SC is grown or can be a gate for tuning the superconducting phase, while the bottom gate tunes the electronic state of X. The thermoelectric signal results from a temperature difference, $\delta T$, between the materials, while rectification occurs as a consequence of voltage differences beyond the linear regime. (b) The valley and spin dependence of the tunneling. Only intra-valley tunneling with tunneling amplitude $t$ of the same spin species is allowed. However, due to the valley and spin polarization in X, the tunneling conductance $G_{\sigma v}^{}$ inherits spin, $\sigma$, and valley, $v$, selectivity enabling the probing of valley- and spin-polarized states in the Ising SC.
  • Figure 2: Various DOS in Ising SC with in-plane field showing both energy and spectral gap, $\Delta_{\rm}^{}$, symmetries. These DOS are responsible for different transport coefficient, see Eq. \ref{['eq:Transport-coeffs']}. Here, $\Delta_{\rm so}^{}/\Delta_0^{}=1,\, h_{\rm }^{}/\Delta_0^{}=0.2,\, \psi = 0$, and $\Delta_0^{} \equiv \Delta \left( T=0,h=0 \right)$.
  • Figure 3: Thermoelectric coefficients in Ising SC. $\alpha_z^{}$ in $h-\Delta_{\rm so}$ space (a) and $h- T$ space (b). (c,d) Same as (a,b) but for $\alpha_x^{}$. Here $\psi=0$, $k_{B}^{}T/\Delta_0^{}=0.3$ in (a,c), and $\Delta_{\rm so}/\Delta_0^{} =1$ in (b,d).
  • Figure 4: Seebeck coefficients from Ising SC, $S_{x/z}^{}$ corresponding to the TEs in Fig. \ref{['fig:TE-Coeffs']}.
  • Figure 5: Rectification effects from Ising SC. (a) Individual currents, $I_{0,x,z}^{}$, and (b) rectification factors. Here $\Delta_{\rm so}/\Delta_0=h/\Delta_0=1$ and $k_{\rm B}^{}T/\Delta_0 = 0.1$.
  • ...and 1 more figures