Scaling laws of electron and hole spin relaxation in indirect band gap (In,Al)As/AlAs quantum dots
T. S. Shamirzaev, D. R. Yakovlev, D. S. Smirnov, V. N. Mantsevich, M. Bayer
Abstract
We investigate the electron and heavy hole spin dynamics as a function of magnetic field in ensembles of indirect band gap (In,Al)As/AlAs quantum dots (QDs) with type-I band alignment. Employing a comprehensive model that accounts for both the exciton level quartet and the magnetic-field-driven redistribution of excitons between these states via spin relaxation processes, we extract the electron ($τ_{se}$) and heavy hole ($τ_{sh}$) spin relaxation times as a function of magnetic field for QDs of varying sizes. Our analysis reveals that both $τ_{se}(B)$ and $τ_{sh}(B)$ exhibit power-law scaling behavior, yet the scaling exponents for electrons and heavy holes show markedly different evolution with QD size. For QDs with a diameter of about 9 nm, we find $τ_{se}(B)\propto B^{-5}$ and $τ_{sh}(B)\propto B^{-3}$. Remarkably, increasing the QD diameter to about 16 nm results in a drastic change of the scaling laws, with both $τ_{se}(B)$ and $τ_{sh}(B)$ following a $\propto B^{-9}$ dependence. We discuss the underlying mechanisms responsible for this size-dependent transformation of the magnetic field scaling behavior of carrier spin relaxation.
