Antiferromagnetic Pure Spin Current Memdevices

Abstract

Spin currents can be generated through various mechanisms, including the piezospintronic effect, which arises when strain or lattice distortions induce a change in the dipolar spin moment, causing a pure spin current without necessarily being accompanied by net charge transport. This opens new possibilities for low-power information processing and novel device architectures. In this work, we propose a novel effect, the spintronic-magneto-impedictive effect, as the theoretical basis for a pure spin-current memory-like device based on antiferromagnetic components. We focus on materials that can be modeled by the so-called spin-Rice-Mele Hamiltonian, incorporating a magnetic field gradient that explicitly breaks inversion symmetry. Our results shed light on how spin currents are generated and controlled, providing new insights into the potential of these materials for next-generation spintronic technologies.

Figures (3)

• Figure 1: Schematic setup for AF Rice-Mele spin chain subjected to a magnetic field gradient. Black and gray bonds represent the short and long links, respectively.
• Figure 2: Simulated spin-current curves as a function of the magnitude of the magnetic-field gradient applied to FeOOH chains, for driving frequencies of 450, 500, 650, and 800 $\left[\mathrm{GHz}\right]$ in panels (a)--(d), respectively. The magnetic-field gradient is of the order of $\nabla B = 10^{8}\,\left[\mathrm{T/m}\right]$, which is within the experimentally relevant range Zablotskii2016-ww.
• Figure 3: Plots of the system's memristive effect $\mathcal{A}$ as a function of different control parameters: (a) $\mathcal{A}$ versus the driving frequency $\omega_D$ associated with the magnetic-field gradient; (b) $\mathcal{A}$ versus the dimerization $\delta t$; (c) $\mathcal{A}$ versus the magnitude of the magnetic-field gradient $\nabla B$; and (d) $\mathcal{A}$ versus the anisotropy parameter $h_n$.