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Joule heating and electronic Gurzhi effect in hydrodynamic differential transport in an electron liquid

Yi Wang, Shu-Yu Zheng, Li Lu, Kai Chang, Chi Zhang

Abstract

We perform a differential resistance study in the hydrodynamic regime of electron liquid in GaAs/AlGaAs quantum wells. At zero magnetic field ($B$) a Lorentzian profile occurs in the nonlinear transport driven by a U-turn (ac) current loop, in (ac + dc) measurements a minimum deepens with the external dc current bias ($j_{dc}$). Our analysis shows that the observed electronic transport valley induced by $j_{dc}$ is attributed to Joule heating effect on the electron temperature ($T_{e}$) of electron liquid. Quantitatively, we demonstrate that the viscosity resistivity ($Δρ$) is proportional to $T^{-2}$ and is consistent with the dc-current induced electronic Gurzhi effect in various configurations of measurement.

Joule heating and electronic Gurzhi effect in hydrodynamic differential transport in an electron liquid

Abstract

We perform a differential resistance study in the hydrodynamic regime of electron liquid in GaAs/AlGaAs quantum wells. At zero magnetic field () a Lorentzian profile occurs in the nonlinear transport driven by a U-turn (ac) current loop, in (ac + dc) measurements a minimum deepens with the external dc current bias (). Our analysis shows that the observed electronic transport valley induced by is attributed to Joule heating effect on the electron temperature () of electron liquid. Quantitatively, we demonstrate that the viscosity resistivity () is proportional to and is consistent with the dc-current induced electronic Gurzhi effect in various configurations of measurement.
Paper Structure (6 sections, 11 equations, 6 figures, 1 table)

This paper contains 6 sections, 11 equations, 6 figures, 1 table.

Figures (6)

  • Figure 1: (Color online). Panel (a): Differential (longitudinal) resistance $R^{\ast}_{xx}$ measured at 1.6 K using U-shape configuration. (b): The first derivative of resistivity $R^{(1)}=(R^{\ast}_{xx}(I)-R^{\ast}_{xx}(0))/2I_{dc}$ with respect to dc current. (c): Fitting curves of the traces in panel (a) via the superposition of two Lorentzian profiles.
  • Figure 2: (Color online). Panel (a): Lorentzian Fitting parameter: $\tau_{2, ee}$ versus applied dc current. The red dashed fitting curve shows that $\tau_{2, ee}$ follows the form of Eq.(4), in which $\theta$ is a coefficient. (b): Normalized differential resistance($d\rho_{xx}/di$) at different dc current. Both $B$-field and dc current are normalized by parameter $B_0=me\tau_2$ and $i_0$. (c), (d): 3D calculated contour plot of resistance $\rho$ and differential magnetoresistance $d\rho_{xx}/di$ are obtained via Eq. (\ref{['eq6']}), respectively.
  • Figure 3: (Color online). Panel (a): Second momentum relaxation rate ($1/\tau_{2, ee}$) (black solid triangles) and its parabolic fitting curve versus dc current ($j_{dc}$) in the U-shape measurement of Structure I at 1.6 K. (b): Slip length $l_s$ (black solid squares) and viscosity $\eta$ (red open circles) obtained from U-shape measurements of Structure-I at 1.6 K.
  • Figure 4: (Color online). Panel (a): $T$-dependent resistance with a U-turn current configuration of measurement of Structure I at zero dc-current. (b): $T$-dependent resistance with an external U-turn current configuration of Structure I at a bias of $I_{dc} = 2\ \mu$A. (c): $T$-dependent slip length $l_{s}$ (black solid squares) and viscosity $\eta$ (red solid circles). (d): Calculated momentum relaxation rate $1/\tau$ (black solid triangles) and second momentum relaxation rate $1/\tau_{2}$ (red open circles) versus $T$, along with theoretical values (highlighted by dashed lines).
  • Figure 5: (Color online). The equivalent current densities at various temperatures (black solid squares) are estimated via equal second momentum rates with Eq. (5) and (8), and the heating effect from $j_{dc}$ versus $T_{e}$ (red solid circles) is deduced with Eq. (11).
  • ...and 1 more figures