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Resonant tunneling diode-integrated terahertz transceiver module for wireless communications

Weijie Gao, Nguyen H. Ngo, Daiki Ichikawa, Mingxiang Li, Yuta Inose, Yuki Morita, Hidemasa Yamane, Yoshiharu Yamada, Shuichi Murakami, Yosuke Nishida, Tadao Nagatsuma, Withawat Withayachumnankul, Masayuki Fujita

Abstract

Terahertz bands enable ultra-broadband wireless communications but require compact, low-cost, and efficient transceiver modules. Conventional implementations based on metallic waveguides or silicon lenses suffer from high loss, bulkiness, and fabrication complexity. Here, we present a compact terahertz transceiver module enabled by a resonant tunneling diode (RTD) integrated with a photonic-electronic antenna chain. The RTD on InP is coupled to a modified Vivaldi antenna and an all-silicon effective-medium-clad waveguide, terminating in a rod antenna interfaced with a 3D-printed cyclic olefin copolymer lens. This architecture enables broadband directive radiation without matching networks or anti-reflection coatings. Packaged in a low-cost 3D-printed PLA enclosure, the module achieves realized gains of 28-33 dBi (E11x) and 30-33 dBi (E11y) across 220-330 GHz. As a receiver, it exhibits a noise voltage density of 5.6 x 10^-9 V/sqrt(Hz), a minimum noise equivalent power of 1.8 pW/sqrt(Hz), and an average responsivity of 6.8 kV/W. It supports error-free transmission up to 30 Gbit/s (OOK) and 80 Gbit/s (16-QAM) over 10 cm, and enables real-time uncompressed high-definition video streaming over 1 m. As a transmitter, it achieves error-free OOK transmission up to 12 Gbit/s at 332 GHz. These results demonstrate a promising terahertz transceiver architecture for 6G systems.

Resonant tunneling diode-integrated terahertz transceiver module for wireless communications

Abstract

Terahertz bands enable ultra-broadband wireless communications but require compact, low-cost, and efficient transceiver modules. Conventional implementations based on metallic waveguides or silicon lenses suffer from high loss, bulkiness, and fabrication complexity. Here, we present a compact terahertz transceiver module enabled by a resonant tunneling diode (RTD) integrated with a photonic-electronic antenna chain. The RTD on InP is coupled to a modified Vivaldi antenna and an all-silicon effective-medium-clad waveguide, terminating in a rod antenna interfaced with a 3D-printed cyclic olefin copolymer lens. This architecture enables broadband directive radiation without matching networks or anti-reflection coatings. Packaged in a low-cost 3D-printed PLA enclosure, the module achieves realized gains of 28-33 dBi (E11x) and 30-33 dBi (E11y) across 220-330 GHz. As a receiver, it exhibits a noise voltage density of 5.6 x 10^-9 V/sqrt(Hz), a minimum noise equivalent power of 1.8 pW/sqrt(Hz), and an average responsivity of 6.8 kV/W. It supports error-free transmission up to 30 Gbit/s (OOK) and 80 Gbit/s (16-QAM) over 10 cm, and enables real-time uncompressed high-definition video streaming over 1 m. As a transmitter, it achieves error-free OOK transmission up to 12 Gbit/s at 332 GHz. These results demonstrate a promising terahertz transceiver architecture for 6G systems.
Paper Structure (17 sections, 1 equation, 19 figures, 1 table)

This paper contains 17 sections, 1 equation, 19 figures, 1 table.

Figures (19)

  • Figure 1: Schematic of the proposed RTD-based terahertz transceiver module. (a) Assembled module. (b) Disassembled module. Magnified view of the (c) EM-clad tapered rod antenna and (d) RTD chip. A 3D-printed COC substrate is inserted under the base of the package to support the RTD and dielectric antenna, as shown in (b).
  • Figure 2: Schematic of RTD chip integrated with EM-clad dielectric waveguide. (a) Perspective view of the integration with RTD chip and the dielectric waveguide. (b) Eptitaxial quantum-well structure of RTD mesa diebold2016. (c) Design of RTD chip. (d) Profile of the modified Vivaldi antenna. The key dimensions of the RTD chip are given as: $L=20~\upmu$m, $g_{\rm{r}}=6~\upmu$m, $w_{\rm{s}}=12~\upmu$m, $l_{\rm{s}}=87.2~\upmu$m, $\theta_{s}=15^{\circ}$, $w_{\rm{p1}}=80~\upmu$m, $l_{\rm{p1}}=55~\upmu$m, $l_{\rm{p2}}=15~\upmu$m, $w_{\rm{p2}}=60~\upmu$m, $g_{\rm{p}}=16~\upmu$m, $w_{\rm{r}}=116~\upmu$m, $l_{\rm{r}}=212~\upmu$m. The duty cycle of the slit array is 50%. In CST simulations, the dielectric waveguide shown in (a) is terminated with a tapered structure to couple to the feeding hollow waveguide gao2019.
  • Figure 3: Simulated results of RTD chip integrated with the dielectric waveguide. $E$-field distributions at (a) 275 GHz, (b) 300 GHz, (c) 400 GHz, and (d) 500 GHz. (e) Scattering ($S$)-parameters. (f) Coupling between the tapered structure and the hollow waveguide. All the $E$-field distributions are in linear scale and normalized by the same factor.
  • Figure 4: Characteristics of air-clad tapered rod antenna fed by EM-clad waveguide. (a) Schematic of the antenna. Magnified view of (b) the hexagonal lattice of the air-silicon effective medium cladding, and (c) the rod antenna. (d) Simulated realized gain of the rod antenna versus taper length at 300 GHz. Simulated $E$-field distributions for (e) $E_{11}^{x}$ and (f) $E_{11}^{x}$ modes at 300 GHz. Simulated radiation patterns of a 3-mm tapered rod antenna for (g) $E_{11}^{x}$ and (h) $E_{11}^{x}$ modes at 300 GHz. The loss tangent of silicon adopted in the CST is $3\times10^{-5}$. Here, $a=100~\upmu$m, $d=90~\upmu$m.
  • Figure 5: Air-clad tapered rod antenna coupled to an azimuthally symmetric elliptical lens. (a) Perspective view of the antenna architecture. (b) Profile of the elliptical lens. Simulated $E$-field distributions of the lens antenna for (c) $E_{11}^x$ mode with horizontal polarization ($xz$-plane) and (d) $E_{11}^y$ mode with vertical polarization ($yz$-plane) at 300 GHz. Simulated and measured reflection coefficients for (e) $E_{11}^x$ and (f) $E_{11}^y$ modes over WR-3.4 band (220--330 GHz). The reflection coefficients were measured using a Keysight VNA with VDI extenders spanning 220--330 GHz.
  • ...and 14 more figures