Logo
ScienceStack
Table of Contents
Fetching ...
Sign In

Characterization of Passive CMOS Strip Detectors After Proton Irradiation

Marta Baselga, Jan-Hendrik Arling, Naomi Davis, Jochen Dingfelder, Ingrid Maria Gregor, Marc Hauser, Fabian Hügging, Karl Jakobs, Michael Karagounis, Roland Koppenhöfer, Kevin Alexander Kroeninger, Fabian Lex, Ulrich Parzefall, Simon Spannagel, Dennis Sperlich, Jens Weingarten, Iveta Zatocilova

Abstract

Strip detectors are populating outer trackers of high-energy particle experiments. They are convenient for covering large areas of sensitive material since they use less power and have fewer readout channels compared to pixels sensors. Nevertheless, they are typically manufactured with a mask set that covers the full wafer, otherwise when using smaller reticles the strip implants have to be stitched. For this project, strip detectors were fabricated in a CMOS commercial foundry using different reticles to be stitched several times, proving the feasibility of this technology. LFoundry produced the passive CMOS strip detector with a production line of 150 nm node technology, using a 150 um thick FZ wafer. Those strip sensors have three different geometries to study different impacts of the CMOS technology. The strips have lengths of 2.1 cm and 4.1 cm, stitching 3 or 5 reticles respectively. This work shows results of 24 GeV proton irradiated passive CMOS strip detectors. The detectors were irradiated at CERN and were tested with different set-ups, not showing any effect from the strips stitching. Proving that this technology is feasible for detecting high-energy particles opens the door to future large productions of passive strip detectors and also to produce active strip sensors in commercial CMOS foundries.

Characterization of Passive CMOS Strip Detectors After Proton Irradiation

Abstract

Strip detectors are populating outer trackers of high-energy particle experiments. They are convenient for covering large areas of sensitive material since they use less power and have fewer readout channels compared to pixels sensors. Nevertheless, they are typically manufactured with a mask set that covers the full wafer, otherwise when using smaller reticles the strip implants have to be stitched. For this project, strip detectors were fabricated in a CMOS commercial foundry using different reticles to be stitched several times, proving the feasibility of this technology. LFoundry produced the passive CMOS strip detector with a production line of 150 nm node technology, using a 150 um thick FZ wafer. Those strip sensors have three different geometries to study different impacts of the CMOS technology. The strips have lengths of 2.1 cm and 4.1 cm, stitching 3 or 5 reticles respectively. This work shows results of 24 GeV proton irradiated passive CMOS strip detectors. The detectors were irradiated at CERN and were tested with different set-ups, not showing any effect from the strips stitching. Proving that this technology is feasible for detecting high-energy particles opens the door to future large productions of passive strip detectors and also to produce active strip sensors in commercial CMOS foundries.
Paper Structure (5 sections, 2 equations, 10 figures)

This paper contains 5 sections, 2 equations, 10 figures.

Table of Contents

  1. Introduction
  2. Electrical characterisation
  3. Charge collection measurements
  4. Summary and Conclusion
  5. Acknowledgements

Figures (10)

  • Figure 1: 4.1 long strip sensor. It shows the stitching lines and the two different strip designs configuration.
  • Figure 2: Regular strip design sketch.
  • Figure 3: Low dose strip design sketch. It features two low-dose n-wells widths, 30 and 55 $\upmu\mathrm{m}$.
  • Figure 4: Current-voltage characteristics of the sensors after irradiation at -20℃.
  • Figure 5: Current-voltage characteristics of the sensors after irradiation at -20℃, with an annealing of 80min at 60℃.
  • ...and 5 more figures