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Beta Tantalum Transmon Qubits with Quality Factors Approaching 10 Million

Atharv Joshi, Apoorv Jindal, Paal H. Prestegaard, Faranak Bahrami, Elizabeth Hedrick, Matthew P. Bland, Tunmay Gerg, Guangming Cheng, Nan Yao, Robert J. Cava, Andrew A. Houck, Nathalie P. de Leon

Abstract

Tantalum-based transmon qubits are a promising platform for building large-scale quantum processors. So far, these qubits have been made from tantalum films grown exclusively in the alpha phase (α-Ta). The beta phase of tantalum (\{beta}-Ta) readily nucleates at room temperature, making it attractive for scalable qubit fabrication. However, \{beta}-Ta is widely believed to be detrimental to qubit performance because it has a lower superconducting critical temperature than α-Ta. We challenge this prevailing belief by fabricating low-loss transmon qubits from \{beta}-Ta films on sapphire. Across 11 qubits, the mean time-averaged quality factor is (5.6 +/- 2.3) x 10^6, with the best qubit recording a time-averaged quality factor of (10.1 +/- 1.3) x 10^6. Resonator studies demonstrate that the dominant microwave loss channel is surface two-level systems, with the surface loss contribution for \{beta}-Ta being about twice that of α-Ta. \{beta}-Ta films exhibit significant kinetic inductance, consistent with an estimated magnetic penetration depth of (1.78 +/- 0.02) μm. This work establishes \{beta}-Ta on sapphire as a material platform for realizing low-loss transmon qubits and other superconducting devices such as compact resonators, kinetic inductance detectors, and quasiparticle traps.

Beta Tantalum Transmon Qubits with Quality Factors Approaching 10 Million

Abstract

Tantalum-based transmon qubits are a promising platform for building large-scale quantum processors. So far, these qubits have been made from tantalum films grown exclusively in the alpha phase (α-Ta). The beta phase of tantalum (\{beta}-Ta) readily nucleates at room temperature, making it attractive for scalable qubit fabrication. However, \{beta}-Ta is widely believed to be detrimental to qubit performance because it has a lower superconducting critical temperature than α-Ta. We challenge this prevailing belief by fabricating low-loss transmon qubits from \{beta}-Ta films on sapphire. Across 11 qubits, the mean time-averaged quality factor is (5.6 +/- 2.3) x 10^6, with the best qubit recording a time-averaged quality factor of (10.1 +/- 1.3) x 10^6. Resonator studies demonstrate that the dominant microwave loss channel is surface two-level systems, with the surface loss contribution for \{beta}-Ta being about twice that of α-Ta. \{beta}-Ta films exhibit significant kinetic inductance, consistent with an estimated magnetic penetration depth of (1.78 +/- 0.02) μm. This work establishes \{beta}-Ta on sapphire as a material platform for realizing low-loss transmon qubits and other superconducting devices such as compact resonators, kinetic inductance detectors, and quasiparticle traps.
Paper Structure (1 equation, 4 figures, 1 table)

This paper contains 1 equation, 4 figures, 1 table.

Figures (4)

  • Figure 1: $\beta$-Ta transmon qubits with quality factors approaching ten million. (a) Cross-sectional STEM image of a Ta film on sapphire. Scale bar: $2$ nm. Inset: Local area diffraction pattern identifies (001) as the preferred growth plane. (b) XRD pattern obtained from the Ta film shows intense peaks at $33.6 \degree$ and $41.7 \degree$ corresponding to $\beta$-Ta $(002)$face1987nucleation and $\mathrm{Al_2 O_3} \ (0006)$ respectively, along with traces of $\alpha$-Ta $(110)$. (c) Four-probe DC resistivity measurement across the superconducting transition of the Ta film. The $T_\mathrm{c}$ of $(0.7 \pm 0.1)$ K is reported as the midpoint of the temperatures of the two consecutive data points that bracket the superconducting transition, and the uncertainty in $T_\mathrm{c}$ represents the measurement temperature step size. The dashed line is a guide to the eye. (d) Schematic of a chip with 6 transmon qubits on a sapphire substrate (white), where the transmon capacitor pads and ground plane are made from $\beta$-Ta (gray). Scale bar: $1$ mm. Excited state population ($P_\mathrm{e}$) as a function of delay time ($\tau$) for a qubit with $f_\mathrm{q} = 2.74$ GHz in a (e) $T_\mathrm{1}$ experiment showing a maximum $T_\mathrm{1} = (958 \pm 19) \ \upmu$s and (f) $T_\mathrm{2, E}$ experiment showing a maximum $T_\mathrm{2, E} = (601 \pm 19) \ \upmu$s. Solid lines are fits to the data points and uncertainties in $T_\mathrm{1}$ and $T_\mathrm{2, E}$ represent the standard error (s.e.) estimated from the covariance matrix of the fit. (g) Plot of $\overline{T}_\mathrm{1}$ and $\overline{T}_\mathrm{2, E}$ multiplied by $\omega_q=2 \pi f_{q}$ for $11$ qubits, where error bars represent the standard deviation (s.d.) of the $T_\mathrm{1}$ and $T_\mathrm{2, E}$ time series. The two dashed lines, in ascending order of slope, depict the $\overline{T}_\mathrm{2, E} = \overline{T}_\mathrm{1}$ and $\overline{T}_\mathrm{2, E} = 2 \, \overline{T}_\mathrm{1}$ limits respectively.
  • Figure 2: Quantifying the kinetic inductance of $\beta$-Ta films. (a) Scatter plot of measured and simulated resonance frequencies ($f_\mathrm{r}$) of 80 CPW resonators fabricated from 11 $\beta$-Ta films with different thicknesses. Film thickness ($t$) ranges from $0.02 \ \upmu$m (lightest blue) to $2.00 \ \upmu$m (darkest blue) and roughly doubles with each intermediate shade of blue. The measured $f_\mathrm{r}$ is always lower than the simulated $f_\mathrm{r}$, with the largest shifts to lower frequencies occurring in the thinnest films. (b) Plot of the kinetic inductance fraction ($\alpha$) versus CPW gap width ($s$) for a subset of 7 films. We use electromagnetic simulations (Section S7, Supporting Information) to obtain an expected $\alpha$ for each $s$ (solid lines). (c) The sheet kinetic inductance ($L_\mathrm{k/\square}$) extracted from each resonator, as a function of $t$, lies on a curve that is well-described by a single magnetic penetration depth $\lambda = 1.78 \, \pm \, 0.02 \ \upmu$m (solid line). The uncertainty in $\lambda$ represents the s.e. estimated from the covariance matrix of the fit. The $L_\mathrm{k/\square}$ saturates to $2.2 \ \mathrm{pH/\square}$ in the bulk limit (dashed line).
  • Figure 3: Quantifying microwave losses in $\beta$-Ta resonators. (a) $Q_\mathrm{int}$ as a function of microwave probe power and mixing chamber stage temperature for a CPW resonator ($s = 6 \ \upmu$m, $t = 263$ nm). Solid lines are fits to a model that parametrizes losses due to TLSs, QPs, and other power- and temperature-independent channels (Section S8, Supporting Information). Inset: Real and imaginary components of the transmission coefficient ($S_\mathrm{21}$) at a power of $-90$ dBm and a temperature of $11$ mK, acquired using a homophasal point distribution baity2024circle, and fit to a circle probst2015efficient (solid line) to extract $Q_\mathrm{int}$ (Section S6, Supporting Information). Error bars of $Q_\mathrm{int}$ represent the s.e. estimated from the covariance matrix of the circle fit, and are smaller than the data points. (b) $Q_\mathrm{TLS, 0}$ extracted from power-temperature sweeps of $Q_\mathrm{int}$ for 71 $\beta$-Ta resonators scales inversely with $p_\mathrm{MS}$. Error bars of $Q_\mathrm{TLS, 0}$ represent the s.e. estimated from the covariance matrix of the fit. We choose $p_\mathrm{MS}$ for consistency with previous literature bland2025millisecondcrowley2023disentanglingwang2015surface. The data are well-described by a single surface loss tangent (solid line). The loss tangents corresponding to the $\alpha$-Ta surface (dashed orange line) and the bulk substrate (dashed black line) and their uncertainties (shaded regions) are taken from Reference crowley2023disentangling for comparison.
  • Figure 4: Performance of $\beta$-Ta transmon qubits. (a) Split violin plot showing the distribution of all $T_\mathrm{1}$ (left, orange) and $T_\mathrm{2, E}$ (right, blue) measurement results multiplied by $\omega_\mathrm{q}$ for all $11$ qubits ordered by increasing $E_\mathrm{J}/E_\mathrm{C}$. The $\overline{T}_\mathrm{1}$ and $\overline{T}_\mathrm{2, E}$ values multiplied by $\omega_\mathrm{q}$ are depicted by horizontal lines within each distribution. The distributions are generated by applying Gaussian kernel density estimation to the sampled data. Results of successive $T_\mathrm{1}$ (orange) and $T_\mathrm{2, E}$ (blue) measurements over a few days acquired on (b) an OCS transmon ($f_\mathrm{q} = 2.74$ GHz) with $E_\mathrm{J}/E_\mathrm{C} = 19$ and (c) a non-OCS transmon ($f_\mathrm{q} = 4.70$ GHz) with $E_\mathrm{J}/E_\mathrm{C} = 74$. The dashed horizontal lines in (b) and (c) depict the $\overline{T}_\mathrm{1}$ (orange) and $\overline{T}_\mathrm{2, E}$ (blue) of each qubit. Error bars of $T_\mathrm{1}$ and $T_\mathrm{2, E}$ represent the s.e. estimated from the covariance matrix of the fit, while uncertainties of $\overline{T}_\mathrm{1}$ and $\overline{T}_\mathrm{2, E}$ are the s.d. of the time series. Both qubits were measured in the same dilution refrigerator with an identical measurement chain during separate cooldowns (Section S3, Supporting Information).