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Valley-dependent electron-phonon scattering in thermoelectric semimetal Ta$_2$PdSe$_6$

Masayuki Ochi, Hitoshi Mori, Akitoshi Nakano

Abstract

Quasi-one-dimensional transition-metal chalcogenide Ta$_2$PdSe$_6$ is a promising thermoelectric semimetal due to the strong electron-hole asymmetry in the carrier lifetime. However, the microscopic origin of such a strong asymmetry remains unclear. In this study, we theoretically investigate electron-phonon scattering in Ta$_2$PdSe$_6$. There is a soft phonon mode mainly consisting of atomic displacements in PdSe$_4$ chains. This soft mode is strongly coupled with the highest valence band at the $Γ$ point, which lies slightly below the Fermi energy, and causes strong electron-phonon scattering. The bottom of the electron pocket energetically overlapped with that band also suffers from strong intervalley scattering, by which the imaginary part of the electron self-energy exhibits a sharp change near the Fermi level. On the other hand, the imaginary part of the self-energy for carriers in the hole pocket shows a moderate energy dependence. Thus, we find that electron-phonon scattering is strongly valley-dependent. Our finding will help us to understand the distinctive transport properties observed in Ta$_2$PdSe$_6$.

Valley-dependent electron-phonon scattering in thermoelectric semimetal Ta$_2$PdSe$_6$

Abstract

Quasi-one-dimensional transition-metal chalcogenide TaPdSe is a promising thermoelectric semimetal due to the strong electron-hole asymmetry in the carrier lifetime. However, the microscopic origin of such a strong asymmetry remains unclear. In this study, we theoretically investigate electron-phonon scattering in TaPdSe. There is a soft phonon mode mainly consisting of atomic displacements in PdSe chains. This soft mode is strongly coupled with the highest valence band at the point, which lies slightly below the Fermi energy, and causes strong electron-phonon scattering. The bottom of the electron pocket energetically overlapped with that band also suffers from strong intervalley scattering, by which the imaginary part of the electron self-energy exhibits a sharp change near the Fermi level. On the other hand, the imaginary part of the self-energy for carriers in the hole pocket shows a moderate energy dependence. Thus, we find that electron-phonon scattering is strongly valley-dependent. Our finding will help us to understand the distinctive transport properties observed in TaPdSe.
Paper Structure (7 sections, 3 equations, 9 figures)

This paper contains 7 sections, 3 equations, 9 figures.

Figures (9)

  • Figure 1: Crystal structure of Ta$_2$PdSe$_6$ depicted using the VESTA software vesta.
  • Figure 2: (a) Electronic band structure and (b) phonon band structure along the ${\bm k}$ path shown in the Brillouin zone (c). In panels (a)--(b), black broken and red solid lines represent first-principles band structure and that obtained by Wannier interpolation, respectively. Definitions of special ${\bm k}$ points are as follows: Y$'=0.5({\bm b}_1 + {\bm b}_2)$, V$=0.5 {\bm b}_2$, L$=0.5({\bm b}_2 + {\bm b}_3)$, A$=0.5 {\bm b}_3$, and Y$=0.5({\bm b}_1 - {\bm b}_2)$. Note that Y and Y$'$ are equivalent while the latter is not in the first Brillouin zone.
  • Figure 3: The lowest (soft) phonon mode at the midpoint of the Y$'$-$\Gamma$ line, i.e., ${\bm q}=0.25({\bm b}_1+{\bm b}_2)$.
  • Figure 4: Electronic band structure with a weight of (a) Ta-$d$, (b) Pd-$d$, (c) Se(1)(2)-$p$, and (d) Se(3)-$p$ orbitals. These band dispersions were calculated with the tight-binding model consisting of the Wannier orbitals. For panel (b), the orbital weight is enlarged with a factor of two for clarity.
  • Figure 5: The imaginary part of the electron self-energy $\Sigma_{n{\bm k}}$ plotted against the Kohn--Sham energy $\epsilon_{n{\bm k}}$ on an $80\times 80\times 8$${\bm k}$ mesh at 300 K. The Fermi level at 300 K was set to zero in the horizontal axis. Blue dots represent the calculated values of $\mathrm{Im}\Sigma_{n{\bm k}}$. For comparison, a red line that is proportional to the electronic density of states $\mathrm{DOS}(\epsilon)$ is also shown.
  • ...and 4 more figures