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Tuning correlated states of twisted mono-bilayer graphene with proximity-induced spin-orbit coupling

Jeyong Park, Mingdi Luo, Louk Rademaker, Jurgen Smet, Mathias S. Scheurer, Laura Classen

Abstract

We study the correlated ground states of twisted mono-bilayer graphene with and without proximity-induced spin-orbit coupling (SOC) from a transition-metal dichalcogenide layer placed on top. We perform self-consistent Hartree-Fock calculations that allow the variational space to include multi-$Q$ translational symmetry broken states for all integer and half-integer fillings of the conduction bands, where signatures of correlated, topological states have been reported experimentally. We find interaction-induced insulators that retain moiré translational symmetry at integer fillings, but that break this symmetry at half-integer fillings. We argue that translational symmetry breaking arises from half-filled polarized bands, even when SOC is present. Yet, we find that small SOC can already crucially affect the spin nature of correlated states. Generally, Ising SOC favors out-of-plane spin polarization and spin-valley locking, while Rashba SOC favors in-plane spin order. If only one of these two terms is present, we find that, depending on the type of SOC, it drives a transition from a tetrahedal antiferromagnet to either a coplanar, non-coplanar, or collinear spin-density wave state for half-integer fillings. The frustration associated with the simultaneous presence of both types of SOC can induce chiral, non-coplanar order in parameter ranges where the ground state in the absence of SOC is collinear.

Tuning correlated states of twisted mono-bilayer graphene with proximity-induced spin-orbit coupling

Abstract

We study the correlated ground states of twisted mono-bilayer graphene with and without proximity-induced spin-orbit coupling (SOC) from a transition-metal dichalcogenide layer placed on top. We perform self-consistent Hartree-Fock calculations that allow the variational space to include multi- translational symmetry broken states for all integer and half-integer fillings of the conduction bands, where signatures of correlated, topological states have been reported experimentally. We find interaction-induced insulators that retain moiré translational symmetry at integer fillings, but that break this symmetry at half-integer fillings. We argue that translational symmetry breaking arises from half-filled polarized bands, even when SOC is present. Yet, we find that small SOC can already crucially affect the spin nature of correlated states. Generally, Ising SOC favors out-of-plane spin polarization and spin-valley locking, while Rashba SOC favors in-plane spin order. If only one of these two terms is present, we find that, depending on the type of SOC, it drives a transition from a tetrahedal antiferromagnet to either a coplanar, non-coplanar, or collinear spin-density wave state for half-integer fillings. The frustration associated with the simultaneous presence of both types of SOC can induce chiral, non-coplanar order in parameter ranges where the ground state in the absence of SOC is collinear.
Paper Structure (32 sections, 32 equations, 10 figures)

This paper contains 32 sections, 32 equations, 10 figures.

Figures (10)

  • Figure 1: Schematic cross-section of SOC-TMBG: a van der Waals heterostructure composed of a graphene monolayer ($l = 1$) and Bernal-stacked graphene bilayer ($l=2$ and $l=3$) with a relative twist angle of $\theta$, as well as a TMD layer. The TMD layer, such as WSe${}_2$, is located on top of the graphene monolayer. We study both the case with and without the TMD layer. A displacement field is applied along the $\boldsymbol{z}$ direction and the associated electrostatic potential is designated as $U,0,-U$ for layer $l=1,2,3$, respectively.
  • Figure 2: The single-particle miniband dispersions, DOS and Fermi surfaces for SOC-TMBG with different SOC parameters. (a-c) Single-particle band dispersion for the lowest conduction and valence minibands as well as the corresponding DOS. The dispersions and the DOS are for $K$ valley only. These data were obtained by diagonalizing Eq. (\ref{['eq:Ham']}) for $K$ valley. The different panels are for different SOC parameters: (a) $(\lambda_I, \lambda_R) = (5,0)$, (b) $(\lambda_I, \lambda_R) = (0,5)$, (c) $(\lambda_I, \lambda_R) = (5,5)$. The SOC parameters are in units of meV. The dispersions are plotted along the momentum path depicted in the inset of panel ($\textbf{c}$) covering the high symmetry points ($K_L\rightarrow K_U\rightarrow\Gamma\rightarrow M \rightarrow\Gamma\rightarrow K_L$). At each momentum, the miniband dispersion is color coded according to the spin expectation value $\langle s_z \rangle$. The color legend is shown on the right of panel ($\textbf{f}$). (d-f) Fermi contours for the same SOC parameter sets as in panels (a-c) at integer fillings and near fillings where the Fermi surface topology changes due to the emergence of VHS. The color coding is again based on the spin expectation value $\langle s_z\rangle$ in the mBZ.
  • Figure 3: HF data for translation-invariant (TI) and $1Q$ states with different SOC parameters. (a) HF energy difference between $1Q$ and TI states per moiré unit cell as a function of filling-factor $\nu$ with different SOC parameters. (b) Filling-factor dependence of moiré translation symmetry breaking order parameter $O_{\textrm{MTSB}}$ with different SOC parameters. (c) Filling-factor dependence of $\langle\boldsymbol{s}\rangle^2=\langle s_x \rangle^2+\langle s_y \rangle^2+\langle s_z \rangle^2$, $\langle \tau_z \rangle$ and $\langle s_z \tau_z \rangle$ with different SOC parameters. See Eq. (\ref{['eq:SDWorder']}) and Eq. (\ref{['eq:expectation']}) for the definitions of order parameters. (d) Table showing which flavor polarized states emerge for each HF ground state at different fillings $\nu$ and SOC parameters. The unit of SOC parameters is meV. Here, VP, SP, and SVP stand for valley polarized, spin polarized, and spin-valley polarized order, respectively. The gray (non)-shaded sectors of the table denote $1Q$ (TI) states. The SOC parameters are in units of meV. The system size is $12\times12$.
  • Figure 4: Correlator matrix and spin order parameter of $1Q$ states (a) Correlator matrix structure with an absolute value $|\tilde{\textbf{P}}_{1Q}|$ at filling factor $\nu = 1/2$ with different SOC parameters. The matrix structure of $\tilde{\textbf{P}}_{1Q}$ is built such that the smallest red-outlined block denotes valley flavor, the next green-outlined block denotes spin (or band depending on presence of Rashba SOC) flavor, and the largest blue-outlined block denotes the additional degrees of freedom from broken moiré translation symmetry. (b) Filling-factor dependence of in-plane $\textbf{S}^2_{xy}$ and out-of-plane $\textbf{S}^2_z$ spin order parameter for the HF ground state with different SOC parameters. The SOC parameters are in units of meV. The system size is $N=12\times12$.
  • Figure 5: GL phase diagram and the ground state configuration (a) GL phase diagram for zero SOC for different parameter sets $(c_2, c_3)$. (b) GL phase diagram for nonzero Ising SOC for different parameter sets $(\lambda_I, a)$. (c) GL phase diagram for nonzero Rashba SOC for different parameter sets $(\lambda_R, a)$. (d) Configuration of net spin expectation value $\boldsymbol{S}(\boldsymbol{R})$ for a collinear SDW ($\textrm{clSDW}_{3Q}$) state, coplanar SDW (cpSDW) state, non-coplanar SDW (ncpSDW) state, and tetrahedral antiferromagnetic (TAF) state in moiré real space, which are obtained from a GL analysis. For the figures, we choose (i) a $\textrm{clSDW}_{3Q}$ state with $\boldsymbol{\phi}_1 = \boldsymbol{\phi}_2=\boldsymbol{\phi}_3\neq0$, (ii) a cpSDW state with $m_{12}=m_{23}=m_{31}=-\frac{1}{2}$ and (iii) a ncpSDW state with $m_{12}=-m_{23}=-m_{31}=-\frac{1}{2}, \ \chi_{\textrm{GL}}\simeq0.38$. Black arrows denote $(\boldsymbol{S}(\boldsymbol{R})_x, \boldsymbol{S}(\boldsymbol{R})_y)$ at position $\boldsymbol{R}$, red dots denote AA sites in moiré real space and green arrows denote the direction of $(\boldsymbol{S}(\boldsymbol{R}=\boldsymbol{R}_{AA})_x, \boldsymbol{S}(\boldsymbol{R}=\boldsymbol{R}_{AA})_y)$ at AA sites. For ncpSDW and TAF, we also show the $z$ component of net spin expectation value $\boldsymbol{S}(\boldsymbol{R})_z$ for each position $\boldsymbol{R}$, which illustrates the non-coplanar nature of the spin configurations.
  • ...and 5 more figures