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Magnetic criticality and magnetocaloric response in MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$

Nazma Firdosh, Shreyashi Sinha, Sujit Manna

Abstract

MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$ are antiferromagnetic topological insulators belonging to the MnBi$_{2n}$Te$_{3n+1}$ series, where structural layering provides a natural route to tune magnetic interaction in van der Waals magnets. Despite extensive interest in their topological properties, how the insertion of Bi$_2$Te$_3$ quintuple layers modifies magnetic critical fluctuations near the antiferromagnetic transition remains unresolved. Here, we combine scanning tunneling microscopy (STM), critical scaling analysis, and magnetocaloric measurements to directly correlate real-space structures with magnetic criticality. STM reveals atomically flat septuple-layer terraces in MnBi$_2$Te$_4$ whereas MnBi$_4$Te$_7$ displays coexisting septuple and quintuple layer terminations reflecting its alternating stacking sequence. MnBi$_2$Te$_4$ exhibits robust three-dimensional Ising-like critical behavior together with a distinct low-temperature first-order transition. In contrast, MnBi$_4$Te$_7$ displays crossover-dominated criticality arising from weakened interlayer exchange and competing magnetic phases. Correspondingly, the magnetocaloric response differs significantly between the two compounds. MnBi$_2$Te$_4$ shows dual-type magnetocaloric behavior with a sharp field-induced sign reversal of the isothermal magnetic entropy change ($-ΔS_M$). It exhibits both inverse ($-ΔS_M < 0$) and conventional ($-ΔS_M > 0$) magnetocaloric effects. In contrast, MnBi$_4$Te$_7$ shows only conventional magnetocaloric response with a broad positive entropy peak. These results establish structural layering as a key parameter governing magnetic critical fluctuations and magnetocaloric behavior in MnBi$_{2n}$Te$_{3n+1}$ topological magnets.

Magnetic criticality and magnetocaloric response in MnBi$_2$Te$_4$ and MnBi$_4$Te$_7$

Abstract

MnBiTe and MnBiTe are antiferromagnetic topological insulators belonging to the MnBiTe series, where structural layering provides a natural route to tune magnetic interaction in van der Waals magnets. Despite extensive interest in their topological properties, how the insertion of BiTe quintuple layers modifies magnetic critical fluctuations near the antiferromagnetic transition remains unresolved. Here, we combine scanning tunneling microscopy (STM), critical scaling analysis, and magnetocaloric measurements to directly correlate real-space structures with magnetic criticality. STM reveals atomically flat septuple-layer terraces in MnBiTe whereas MnBiTe displays coexisting septuple and quintuple layer terminations reflecting its alternating stacking sequence. MnBiTe exhibits robust three-dimensional Ising-like critical behavior together with a distinct low-temperature first-order transition. In contrast, MnBiTe displays crossover-dominated criticality arising from weakened interlayer exchange and competing magnetic phases. Correspondingly, the magnetocaloric response differs significantly between the two compounds. MnBiTe shows dual-type magnetocaloric behavior with a sharp field-induced sign reversal of the isothermal magnetic entropy change (). It exhibits both inverse () and conventional () magnetocaloric effects. In contrast, MnBiTe shows only conventional magnetocaloric response with a broad positive entropy peak. These results establish structural layering as a key parameter governing magnetic critical fluctuations and magnetocaloric behavior in MnBiTe topological magnets.
Paper Structure (9 sections, 16 equations, 7 figures)

This paper contains 9 sections, 16 equations, 7 figures.

Figures (7)

  • Figure 1: (a) Crystal structure of MnBi$_2$Te$_4$ composed of septuple layers (SL) stacked along the $c$-axis. (b) Crystal structure of MnBi$_4$Te$_7$, where MnBi$_2$Te$_4$ septuple layers alternate with Bi$_2$Te$_3$ quintuple layers (QL). (c) Large-scale (400 nm $\times$ 400 nm) constant current STM topography(U = 0.5 V, I = 60 pA) obtained on freshly cleaved (0001) surface of MnBi$_2$Te$_4$, displaying atomically flat terraces separated by sharp step edges. The height profile along the indicated direction yields a step height $\sim$1.41 nm consistent with a single septuple-layer thickness as shown in (d). (e) Atomically-resolved STM image (20 nm $\times$ 20 nm) of the SL-terminated surface of MnBi$_2$Te$_4$, clearly depicting the hexagonal lattice of Te-terminated surface (U = 150 mV, I = 300 pA). (f) Large-scale STM topography (50 nm $\times$ 50 nm) taken (U = 900 mV, I = 140 pA) of the Te-terminated (0001) surface of MnBi$_4$Te$_7$, exhibiting terraces with two discrete step heights corresponding to distinct surface terminations. (g) Line profile across the step in (f), revealing step heights of $\sim$1.38 nm and $\sim$1.02 nm, consistent with septuple- and quintuple-layer thicknesses, respectively. (h) High-resolution STM image (10 nm $\times$ 10 nm) acquired on the SL-terminated terrace (U = 500 mV, I = 460 pA) of MnBi$_4$Te$_7$. (i) Atomic-resolution STM image (10 nm $\times$ 10 nm) acquired (U = 400 mV, I = 150 pA) on the QL-terminated terrace, both depicting the hexagonal Te- terminated surface lattice.
  • Figure 2: (a) M–T curves of MnBi$_2$Te$_4$ single crystals under different magnetic field with $H \parallel c$. The anomaly at $\sim$24.1 K marks the AFM transition. Inset: zoomed M-T curves for lower fields. (b, c) Isothermal magnetization of MnBi$_2$Te$_4$, for $H \parallel c$ and $H \parallel ab$, respectively. We observe a metamagnetic transition (spin--flip) around 2-4 $T$ in $H \parallel c$, evolving into a gradual response toward $T_N$ in $H \parallel c$ configuration. (d) M–T curves of MnBi$_4$Te$_7$ single crystals under ZFC and FC with $H \parallel c$. The transition at $\sim$12.9 K indicates layered AFM ordering. (e, f) Isothermal magnetization of MnBi$_4$Te$_7$, for $H \parallel c$ and $H \parallel ab$, respectively. We observe a weak anomaly at lower temperatures and magnetic fields compared with MnBi$_2$Te$_4$.
  • Figure 3: Normalized slope of the Arrott plots as a function of temperature in MnBi$_2$Te$_4$. (b) Temperature dependence of the spontaneous magnetization $M_{S}$ (left axis) and the inverse initial susceptibility $\chi_{0}^{-1}$ (right axis) fitted with the power-law relations in Eqs. (3) and (5). The solid lines represent the best fits. (c) Modified Arrott plots $(M^{1/\beta}$ vs. $(H/M)^{1/\gamma})$ yields $\beta$=0.319 and $\gamma$=1.221. (d) Kouvel--Fisher plots of $M_{S}(dM_{S}/dT)^{-1}$ (left axis) and $\chi_{0}^{-1}(d\chi_{0}^{-1}/dT)^{-1}$ (right axis) as a function of temperature.
  • Figure 4: (a) Scaling plots of the renormalized magnetization $M|\varepsilon|^{-\beta}$ versus renormalized field $H|\varepsilon|^{-(\beta+\gamma)}$ for MnBi$_2$Te$_4$, confirms the validity of the critical exponents $\beta = 0.319$ and $\gamma = 1.221$. The inset shows the same data on a log--log scale, confirming consistency with the scaling hypothesis. (b) Enlarged view of the low-temperature region of the log–log Renormalized Arrott Plots, where arrows indicate characteristic phase-boundary points. (c) Magnetic phase diagram of MnBi$_2$Te$_4$ obtained by combining the results from the renormalized Arrott plot (RAP) analysis with field-dependent magnetization measurements.
  • Figure 5: (a) Normalized slope of the Arrott plots as a function of temperature in MnBi$_4$Te$_7$. (b) Modified Arrott plots (MAPs) constructed using the critical exponents obtained from the modified iteration method.
  • ...and 2 more figures