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Comprehensive structural and optical analysis of differently oriented Yb-implanted $β$-Ga$_2$O$_3$

Joanna Matulewicz, Renata Ratajczak, Mahwish Sarwar, Ewa Grzanka, Vitalii Ivanov, Damian Kalita, Cyprian Mieszczynski, Przemyslaw Jozwik, Slawomir Prucnal, Ulrich Kentsch, Rene Heller, Elzbieta Guziewicz

Abstract

This study presents investigations of Yb-doped $β$-Ga$_2$O$_3$, an ultrawide bandgap semiconductor with potential use in future power and optoelectronic devices operating in high-radiation environments. The research has focused on the problem of structural damage caused by the implantation of Yb-ions into three differently oriented crystals and the optical response of created systems. The (001), (010), and (-201)-oriented $β$-Ga$_2$O$_3$ crystals were implanted with three different fluences of 150 keV Yb ions and examined using a variety of experimental techniques: high-resolution X-ray diffraction (HRXRD), Rutherford backscattering spectrometry in channeling mode (RBS/c), Raman and photoluminescence (PL) spectroscopies, to provide comprehensive information about studied systems. Furthermore, the RBS/c studies were supported by Monte Carlo simulations. The results show distinctions between differently oriented crystals. In particular, (010)-oriented crystals are characterized by the lowest concentration of extended defects and the presence of compressive stress. In contrast, samples with the other two orientations exhibit tensile stress and significantly higher levels of extended defects. Interestingly, the PL spectra of (010)-oriented $β$-Ga$_2$O$_3$ show the lowest emission from Yb$^{3+}$ ions, suggesting that specific types of extended defects, whose formation is more favorable in the other two orientations than in (010), enhance Yb$^{3+}$ luminescence instead of suppressing it.

Comprehensive structural and optical analysis of differently oriented Yb-implanted $β$-Ga$_2$O$_3$

Abstract

This study presents investigations of Yb-doped -GaO, an ultrawide bandgap semiconductor with potential use in future power and optoelectronic devices operating in high-radiation environments. The research has focused on the problem of structural damage caused by the implantation of Yb-ions into three differently oriented crystals and the optical response of created systems. The (001), (010), and (-201)-oriented -GaO crystals were implanted with three different fluences of 150 keV Yb ions and examined using a variety of experimental techniques: high-resolution X-ray diffraction (HRXRD), Rutherford backscattering spectrometry in channeling mode (RBS/c), Raman and photoluminescence (PL) spectroscopies, to provide comprehensive information about studied systems. Furthermore, the RBS/c studies were supported by Monte Carlo simulations. The results show distinctions between differently oriented crystals. In particular, (010)-oriented crystals are characterized by the lowest concentration of extended defects and the presence of compressive stress. In contrast, samples with the other two orientations exhibit tensile stress and significantly higher levels of extended defects. Interestingly, the PL spectra of (010)-oriented -GaO show the lowest emission from Yb ions, suggesting that specific types of extended defects, whose formation is more favorable in the other two orientations than in (010), enhance Yb luminescence instead of suppressing it.
Paper Structure (14 sections, 1 equation, 10 figures, 2 tables)

This paper contains 14 sections, 1 equation, 10 figures, 2 tables.

Table of Contents

  1. Introduction
  2. Experimental Section
  3. Sample preparation
  4. Implantation
  5. XRD
  6. RBS/c
  7. Raman spectroscopy
  8. PL spectroscopy
  9. Results and discussion
  10. HRXRD
  11. RBS/c
  12. Raman spectroscopy
  13. PL spectroscopy
  14. Conclusion

Figures (10)

  • Figure 1: The unit cell of $\beta$-Ga$_2$O$_3$ created by VESTA momma2011vesta.
  • Figure 2: HRXRD 2$\theta$ scans of (-201)-oriented $\beta$-Ga$_2$O$_3$ crystal (a) implanted with Yb ions with different fluences and (b) implanted with Yb with fluence of $1\cdot 10^{15}$ ions/cm$^2$ and annealed in oxygen at 800° C for 10 minutes.
  • Figure 3: HRXRD 2$\theta$ scans of (-201)-oriented $\beta$-Ga$_2$O$_3$ crystal implanted with Yb ions with a fluence of $1\cdot 10^{15}$ ions/cm$^2$
  • Figure 4: RBS random (open symbols) and aligned (solid symbols) spectra for differently oriented $\beta$-Ga$_2$O$_3$ crystals implanted with different fluences of Yb ions. The spectra on the left (a) show the signal from gallium atoms and the spectra on the right (b) - from ytterbium atoms.
  • Figure 5: The angular scans obtained by RBS/c analysis of virgin samples of (001), (010), and (-201)-oriented $\beta$-Ga$_2$O$_3$ crystals.
  • ...and 5 more figures