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Flux-Driven Conductance Scaling in Disordered Topological Insulator Nanowires

Shimon Arie Haver, Emuna Rimon, Eytan Grosfeld

Abstract

We study quantum transport in disordered topological insulator nanowires (TINWs) under axial magnetic flux. At integer flux quanta, spin-momentum locking produces weak anti-localization peaks, while at half-integer flux quanta a helical mode protected by time-reversal symmetry (TRS) suppresses backscattering. By analyzing the flux dependence of the localization length, we uncover critical scaling around half-integer flux quanta, reflecting the competition between disorder scattering and flux-induced breaking of TRS protection. As the disorder strength increases, we identify a crossover in scaling behavior that drives the system into a regime governed by a universal critical exponent. Our results demonstrate a scaling collapse across flux values, establishing a universal regime of flux-driven delocalization in TINWs.

Flux-Driven Conductance Scaling in Disordered Topological Insulator Nanowires

Abstract

We study quantum transport in disordered topological insulator nanowires (TINWs) under axial magnetic flux. At integer flux quanta, spin-momentum locking produces weak anti-localization peaks, while at half-integer flux quanta a helical mode protected by time-reversal symmetry (TRS) suppresses backscattering. By analyzing the flux dependence of the localization length, we uncover critical scaling around half-integer flux quanta, reflecting the competition between disorder scattering and flux-induced breaking of TRS protection. As the disorder strength increases, we identify a crossover in scaling behavior that drives the system into a regime governed by a universal critical exponent. Our results demonstrate a scaling collapse across flux values, establishing a universal regime of flux-driven delocalization in TINWs.
Paper Structure (7 equations, 4 figures)

This paper contains 7 equations, 4 figures.

Figures (4)

  • Figure 1: Variation of the conductance with the wire length and the dimensionless axial flux. With $\mu[\hbar\Omega]=2.751$, $5$-$6$ channels participate in the conductance, depending on $\Phi/\Phi_0$. $R[10^3\ell_c]=0.2$ and the disorder strength is $W=0.05$. The results are averaged over $1000$ realizations.
  • Figure 2: Variation of the conductance with the chemical potential and the dimensionless axial flux, for wire lengths $L[10 \ell_c]=0 \text{ (a)},\text{ }30 \text{ (b)},\text{ }300 \text{ (c)},\text{ and }3000 \text{ (d)}$. The diamond pattern in the clean limit transitions as $L$ increases into a sharp peak at $\eta=1/2$, where the helical state persists; while the weak anti-localization peak remains visible at $\eta=1$ for moderate system lengths. The parameters are the same as in Fig. \ref{['fig:conductance-L-eta']}.
  • Figure 3: Variation of the weak anti-localization peaks with the chemical potential, at zero flux, for wire length $L[10\ell_c]=5000$ ($L[10\ell_c]=50$ in the inset). The parameters are the same as in Fig. \ref{['fig:conductance-L-eta']}.
  • Figure 4: Delocalization transition near half-flux quantum, $\eta=1/2$. (a) The raw $\xi_L$ for $L=10^5 \ell_c$ and $\mu[\hbar\Omega]=2.751$ (orange), and rescaled localization length $\xi$ (blue) as function of $1/2-\eta$. A linear fit to the rescaled data (red) in the scaling regime gives a critical exponent of $\nu=1.64$, near $\eta=\Phi/\Phi_0=1/2$. The inset shows the collapse to a universal function of $\xi_L/L$ as a function of $\xi/L$ for different flux values. (b) The localization length $\xi$ as function of $1/2-\eta$, for two values of $\mu$ ($\mu[\hbar\Omega]=0.751,2.751$) and several disorder strengths. In the inset, the critical exponent $\nu$ is displayed as function of the disorder strength. For $W>0.1$, the critical exponents are $\nu=2.02\pm0.03$, and $\nu=1.7\pm0.1$ respectively.