Gapped out-of-phase plasmon modes in alternating-twist multilayer graphene
Taehun Kim, Hongki Min
TL;DR
This work addresses plasmon modes in moiré-engineered alternating-twist multilayer graphene (ATMG) using the random-phase approximation in a Coulomb-eigenvector basis derived from Kac-Murdock-Szegő Toeplitz matrices. The in-phase plasmon exhibits the conventional $\omega \propto \sqrt{q}$ dispersion, while out-of-phase modes acquire gaps governed by interband transitions between Dirac cones of different velocities; in the weak Coulomb limit these gaps persist as undamped modes above a critical twist angle (approximately $2.75^\circ$ for AT3G) and remain largely density-independent, with the gaps tunable by a perpendicular electric field. The authors develop analytic expressions within a first-shell continuum model and validate them against full numerical calculations for $N=3$ and $N=4$, showing gate-tunable plasmon gaps via Dirac-cone shifts under an interlayer bias $U$. Overall, the study reveals a robust platform for engineering undamped, gate-tunable out-of-phase plasmons in moiré graphene through twist-angle control, interlayer tunneling, and external fields, supported by explicit Coulomb-eigenvector formalism and RPA analyses.
Abstract
We theoretically investigate the plasmon modes of alternating-twist multilayer graphene. In multilayer systems, interlayer coupling gives rise to distinctive plasmon modes, but calculations in moiré systems remain challenging due to their complex tunneling structures. Using the Kac-Murdock-Szegő Toeplitz formalism, we derive that the in-phase mode exhibits the conventional $\sqrt{q}$ behavior, while the out-of-phase modes acquire plasmon gaps determined by specific interband transitions between Dirac cones with different velocities in the long-wavelength limit. We demonstrate that these out-of-phase modes remain undamped in the weak Coulomb-interaction limit when the twist angle exceeds a critical value ($θ\gtrsim 2.75^\circ$ for the alternating-twist trilayer case), regardless of the carrier density as long as the low-energy effective Dirac Hamiltonian remains valid. Furthermore, we consider the effect of a perpendicular electric field, and demonstrate how plasmon modes can be tuned by a gate voltage.
