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Stacking-dependent magnetic ordering in bilayer ScI$_{2}$

Soumyajit Sarkar, Soham Chandra

TL;DR

The study demonstrates that bilayer ScI$_2$ exhibits stacking-dependent interlayer magnetic exchange, enabling a switch between ferromagnetic and antiferromagnetic coupling through lateral registry changes, while intralayer ferromagnetism and strong out-of-plane anisotropy remain robust. Using DFT+$U$ to quantify exchange constants and MAE, and classical Monte Carlo simulations to assess finite-temperature behavior, the authors show ordering temperatures around $T_c \approx 360$--$375$ K for all stackings, with AB stacking favoring AFM interlayer alignment and AA/BA stackings favoring FM. The results reveal that stacking geometry can control the magnetic ground state without compromising thermal stability, offering a route to tunable magnetism in 2D van der Waals materials for spintronic applications. The combination of a large intralayer exchange scale and stacking-tunable interlayer exchange suggests a general design principle for stacking-engineered magnetism in layered transition-metal halides and related systems, with experimental validation and external-stimulus tuning as promising future directions.

Abstract

Stacking-dependent magnetism in two-dimensional van der Waals materials offers an effective route for controlling magnetic order without chemical modification. Here, we present a combined first-principles and finite-temperature study of magnetic ordering in bilayer ScI$_{2}$ with different stacking configurations. Using density functional theory with Hubbard-U corrections, we investigate the structural, electronic, and magnetic properties of monolayer and bilayer ScI$_{2}$ in $AA$, $AB$, and $BA$ stackings. The electronic structure exhibits a spin-polarized ground state dominated by Sc-$d$ states near the Fermi level. Mapping total energies onto an effective Heisenberg spin Hamiltonian reveals strong intralayer ferromagnetic exchange that is largely insensitive to stacking, while the inter-layer exchange depends strongly on stacking geometry, favoring ferromagnetic coupling for $AA$ and $BA$ stackings and antiferromagnetic coupling for the $AB$ stacking. Spin-orbit coupling calculations show that both monolayer and bilayer ScI$_{2}$ possess a robust out-of-plane magnetic easy axis. Finite-temperature Monte Carlo simulations indicate that all bilayer configurations sustain magnetic ordering at and above room temperature, with ordering temperatures in the range $360-375$ K, as confirmed by Binder cumulant analysis and finite-size scaling. These results demonstrate that stacking geometry enables control of the magnetic ground state in bilayer ScI$_{2}$ without significantly affecting its thermal stability.

Stacking-dependent magnetic ordering in bilayer ScI$_{2}$

TL;DR

The study demonstrates that bilayer ScI exhibits stacking-dependent interlayer magnetic exchange, enabling a switch between ferromagnetic and antiferromagnetic coupling through lateral registry changes, while intralayer ferromagnetism and strong out-of-plane anisotropy remain robust. Using DFT+ to quantify exchange constants and MAE, and classical Monte Carlo simulations to assess finite-temperature behavior, the authors show ordering temperatures around -- K for all stackings, with AB stacking favoring AFM interlayer alignment and AA/BA stackings favoring FM. The results reveal that stacking geometry can control the magnetic ground state without compromising thermal stability, offering a route to tunable magnetism in 2D van der Waals materials for spintronic applications. The combination of a large intralayer exchange scale and stacking-tunable interlayer exchange suggests a general design principle for stacking-engineered magnetism in layered transition-metal halides and related systems, with experimental validation and external-stimulus tuning as promising future directions.

Abstract

Stacking-dependent magnetism in two-dimensional van der Waals materials offers an effective route for controlling magnetic order without chemical modification. Here, we present a combined first-principles and finite-temperature study of magnetic ordering in bilayer ScI with different stacking configurations. Using density functional theory with Hubbard-U corrections, we investigate the structural, electronic, and magnetic properties of monolayer and bilayer ScI in , , and stackings. The electronic structure exhibits a spin-polarized ground state dominated by Sc- states near the Fermi level. Mapping total energies onto an effective Heisenberg spin Hamiltonian reveals strong intralayer ferromagnetic exchange that is largely insensitive to stacking, while the inter-layer exchange depends strongly on stacking geometry, favoring ferromagnetic coupling for and stackings and antiferromagnetic coupling for the stacking. Spin-orbit coupling calculations show that both monolayer and bilayer ScI possess a robust out-of-plane magnetic easy axis. Finite-temperature Monte Carlo simulations indicate that all bilayer configurations sustain magnetic ordering at and above room temperature, with ordering temperatures in the range K, as confirmed by Binder cumulant analysis and finite-size scaling. These results demonstrate that stacking geometry enables control of the magnetic ground state in bilayer ScI without significantly affecting its thermal stability.
Paper Structure (9 sections, 8 equations, 4 figures, 3 tables)

This paper contains 9 sections, 8 equations, 4 figures, 3 tables.

Figures (4)

  • Figure 1: (a) Top view of monolayer ScI$_2$. Side view of bilayer ScI$_2$ showing three distinct stacking configurations: (b)BA, (c) AA, and (d)AB. Scandium and iodine atoms are represented in violet and grey, respectively.
  • Figure 2: Electronic structure of monolayer ScI$_2$. (a) Spin-polarized band structure along high-symmetry directions of the Brillouin zone. (b) Spin-polarized density of states showing contributions from Sc-$d$ and I-$p$ orbitals. (c) Spin-polarized density of states projected on the five $d$ orbitals of Sc. The Fermi level $\left( E_F\right)$ is set to zero of the energy axis.
  • Figure 3: Stacking-dependent electronic structure of bilayer ScI$_2$. (a) Projected density of states for the AA-stacked bilayer, highlighting Sc-$d$ and I-$p$ orbital contributions. (b) Spin-polarized band structures for AA, AB, and BA stacking configurations. Orange (grey) bands present the majority (minority) spin channel. The Fermi level is set to zero of the energy axis.
  • Figure 4: Finite-size scaling analysis of the magnetic transition temperature in bilayer ScI$_2$. Panels (a)–(c) show the temperature dependence of the Binder cumulant $U_L$ for different system sizes for the AA, AB, and BA stacking configurations, respectively. Panels (d)–(f) display the corresponding Binder cumulant crossings used to extract finite-size estimates of the transition temperature. The Monte Carlo simulations shown in panels (a)–(f) were performed on lattices with a linear dimension of $L = 100$. Panels (g)–(h) present the weighted linear extrapolation of the critical temperature $T_c$ as a function of $1/L$, where the intercept yields the transition temperature in the thermodynamic limit.