Ordered states of undoped AB bilayer graphene: bias induced cascade of transitions
A. V. Rozhkov, A. O. Sboychakov, A. L. Rakhmanov
Abstract
Using mean-field theory, we determine the electronic phase diagram of undoped AB-stacked bilayer graphene in the presence of a transverse electric field. In addition to multiple competing electronic instabilities characterized by excitonic order parameters, our framework incorporates the long-range Coulomb energy associated with interlayer polarization. This long-range interaction plays a crucial role, as it significantly influences both the structure and the relative energies of the competing ordered states. We derive a set of self-consistency equations and solve them both numerically and analytically. Our findings reveal that, as the bias field is varied, the bilayer undergoes a cascade of first-order transitions between several ordered insulating phases for which order-parameter structures are explicitly identified. Some of these phases are characterized by two inequivalent single-particle gaps, whose magnitudes depend on the valley and spin quantum numbers. Field-driven transitions are accompanied by discontinuous and non-monotonic variations of the single-electron gap. We relate our results to Hartree-Fock numerical calculations and to experimental research, including observations of fractional metallic phases that emerge upon doping the bilayer system.
