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Strain-Driven Altermagnetic Spin Splitting Effect in RuO$_2$

Seungjun Lee, Seung Gyo Jeong, Jian-Ping Wang, Bharat Jalan, Tony Low

Abstract

The non-relativistic spin-momentum locking in altermagnets gives rise to a time-reversal-odd spin Hall effect, known as the altermagnetic spin-splitting effect (ASSE). Although ASSE was first reported in RuO$_2$, subsequent experiments have yielded inconsistent results, leaving its spin-transport mechanism unclear. Here, we systematically investigate how strain, crystal orientation, and the Hubbard $U$ parameter influence the magnetic ground state and spin Hall response of RuO$_2$. Guided by recent experimental observations, we find that $U$ is likely smaller than the value required to induce intrinsic magnetism, suggesting that bulk RuO$_2$ and (001)/(101) RuO$_2$ thin films grown on TiO$_2$ are nonmagnetic in the absence of extrinsic effects. In contrast, (100) and (110) films exhibit strain-induced altermagnetic spin splitting, leading to a strong ASSE even without Hubbard $U$ corrections. These results reconcile previous experimental discrepancies and provide design guidelines for RuO$_2$-based spintronic devices.

Strain-Driven Altermagnetic Spin Splitting Effect in RuO$_2$

Abstract

The non-relativistic spin-momentum locking in altermagnets gives rise to a time-reversal-odd spin Hall effect, known as the altermagnetic spin-splitting effect (ASSE). Although ASSE was first reported in RuO, subsequent experiments have yielded inconsistent results, leaving its spin-transport mechanism unclear. Here, we systematically investigate how strain, crystal orientation, and the Hubbard parameter influence the magnetic ground state and spin Hall response of RuO. Guided by recent experimental observations, we find that is likely smaller than the value required to induce intrinsic magnetism, suggesting that bulk RuO and (001)/(101) RuO thin films grown on TiO are nonmagnetic in the absence of extrinsic effects. In contrast, (100) and (110) films exhibit strain-induced altermagnetic spin splitting, leading to a strong ASSE even without Hubbard corrections. These results reconcile previous experimental discrepancies and provide design guidelines for RuO-based spintronic devices.
Paper Structure (1 section, 2 equations, 4 figures, 1 table)

This paper contains 1 section, 2 equations, 4 figures, 1 table.

Table of Contents

  1. Acknowledgements

Figures (4)

  • Figure 1: (a–d) Top views of the crystal structures of RuO$_2$ with orientations (001), (101), (110), and (100), respectively. The arrows in (c) and (d) indicate the compressive strain imposed by the TiO$_2$ substrate along its [001] direction. (e) Hubbard $U$ dependent Néel vector magnitude of bulk, (001), (101), (110) and (100) RuO$_2$, respectively, without spin-orbit coupling (SOC), and that of bulk RuO$_2$ with SOC. (f-h) Electronic structures of bulk (100) and (110) RuO$_2$ without $U$ and SOC.
  • Figure 2: (a) Hubbard $U$ dependent Néel vector magnitude of bulk RuO$_2$, and fully-strained (001), (101), (110) and (100) RuO$_2$ on TiO$_2$ substrates, respectively, without spin-orbit coupling (SOC), , together with the result for bulk RuO$_2$ with SOC. (b-d) Electronic structures of bulk RuO$_2$, fully-strained (100) and (110) RuO$_2$, without $U$ and SOC.
  • Figure 3: (a-c) Hubbard $U$ dependent $\mathcal{T}$-even, $\mathcal{T}$-odd spin Hall conductivities, and spin Hall angles of bulk RuO$_2$ at Fermi level. $x$, $y$, and $z$ cartesian coordinates indicate corresponding directions in Fig. \ref{['fig1']} (e).
  • Figure 4: The representative (a-b) $\mathcal{T}$-even and (c-d) $\mathcal{T}$-odd SHC tensor components in (100) and (110) RuO$_2$, respectively. $x$, $y$, and $z$ cartesian coordinates indicate corresponding directions in Fig. \ref{['fig1']}(g) and (h), and $\phi$ indicate the in-plane rotation angle.