Coupling between CaWO$_4$ phonons and Er$^{3+}$ dopants
Mikhael T. Sayat, Federico Pisani, Hin Lok Chang, Yaroslav Zhumagulov, Kirrily C. Rule, Tom Fennell, Jakob Nunnendorf, Chee Kwan Gan, Oleg V. Yazyev, Ping Koy Lam, Jian-Rui Soh
TL;DR
This study combines density-functional perturbation theory and inelastic neutron scattering to map the full phonon spectrum of CaWO$_4$, a promising host for Er$^{3+}$-based quantum memories. A symmetry analysis identifies eight phonon modes, predominantly Raman-active $A_g$ and $B_g$, that couple directly to Er$^{3+}$ crystal-field operators, including a low-energy $B_g$ mode at $9.1$ meV that strongly mediates spinlattice relaxation. The work provides a microscopic phonon bath description and outlines phonon-engineering strategies—such as nanostructuring to create gaps and waveguide integration—to suppress deleterious phonons and improve storage times and coherence in Er-doped CaWO$_4$ devices. These insights enable targeted optimization of quantum memories in solid-state crystals by controlling phonon–erbium interactions.
Abstract
We investigate the lattice dynamics of CaWO$_4$, a promising host crystal for erbium-based quantum memories, using inelastic neutron scattering together with density-functional perturbation theory. The measured phonon dispersion along the (100), (001), and (101) reciprocal space direction reveals phonon bands extending up to 130 meV, with a gap between 60 and 80 meV, in good agreement with our calculations. From a symmetry analysis of the phonon eigenmodes, we identify eight Raman-active modes that can couple directly to the Er$^{3+}$ crystal-field operators, including a low-energy $B_g$ mode at 9.1 meV that is expected to play a dominant role in phonon-assisted spin-lattice relaxation. These results provide a microscopic description of the phonon bath in CaWO$_4$ and establish a basis for engineering phononic environments to mitigate the loss of stored quantum states and optimize Er-doped CaWO$_4$ for quantum-memory applications.
