Electronic Structure of Epitaxial Films of the Bilayer Strontium Ruthenate: Sr$_{3}$Ru$_2$O$_{7}$
Sethulakshmi Sajeev, Arnaud P. Nono Tchiomo, Brendon Faeth, Evan Krysko, Olivia Peek, Matthew J. Barone, Jordan Shields, Neha Wadehra, Garu Gebreyesus, Divine Kumah, Richard M. Martin, Darrell G. Schlom, Prosper Ngabonziza
TL;DR
The study addresses how epitaxial strain tunes the low-energy electronic structure of the bilayer ruthenate Sr3Ru2O7 by combining in-situ ARPES on MBE-grown films under tensile (STO) and compressive (LSAT) strain with DFT calculations using lattice parameters from reciprocal-space mapping. The results show strain-driven Fermi-surface topology changes and symmetry reductions: tensile strain preserves tetragonal-like structure while compressive strain induces orthorhombicity and RuO6 octahedral rotations, with DFT reproducing the main features when realistic in-plane geometries are used. Notably, flat bands appear within ~$15$ meV below $E_F$ along $Γ$–$X$ in the orthorhombic phase and near $Γ$ in the tetragonal phase, signaling potential van Hove singularities that could promote magnetic instabilities in the films. The work demonstrates strong strain sensitivity of Sr3Ru2O7’s electronic structure, validating strain engineering as a route to access correlated phases in bilayer ruthenates and guiding future high-resolution ARPES and transport studies.
Abstract
We report the first combined study of the low-energy electronic band structure of epitaxial Sr$_3$Ru$_2$O$_7$ films using angle-resolved photoemission spectroscopy (ARPES) and density functional theory (DFT). The complete Fermi-surface topography of the near-Fermi-level bands is determined from in-situ ARPES measurements. To investigate the effects of substrate-induced strain on the band structure, Sr$_3$Ru$_2$O$_7$ thin films are epitaxially grown on SrTiO$_3$ (STO) and (LaAlO$_{3}$)$_{0.3}$(Sr$_{2}$TaAlO$_{6}$)$_{0.7}$ (LSAT) substrates using molecular beam epitaxy. The combination of the measured Fermi-surfaces along with the theoretical interpretation, clearly show dramatic changes in the Fermi surface topologies that result from the underlying strain states of the films on the two substrates. We find that the Sr$_3$Ru$_2$O$_7$ films prepared on STO are tensile strained with tetragonal symmetry, whereas those grown on LSAT are compressively strained with orthorhombic symmetry. Within $\sim15~\text{meV}$ below the Fermi level, we observe two flat bands along $Γ$-$X$ in the orthorhombic phase and around $Γ$ in the tetragonal phase. These features could be favorable for van Hove singularities near the Fermi level, and highlight the emergence of magnetic instabilities in epitaxial Sr$_3$Ru$_2$O$_7$ films.
