Compact self-matched gyrators using edge magnetoplasmons
Aldo Tarascio, Yiqi Zhao, Rafael S. Eggli, Taras Patlatiuk, Christian Reichl, Werner Wegscheider, Stefano Bosco, Dominik M. Zumbühl
TL;DR
This work introduces compact, self-impedance-matched gyrators based on edge magnetoplasmons in a GaAs/AlGaAs 2DEG, achieving controllable non-reciprocity with a sub-mm footprint and insertion losses of a few dB. By grounding one port and capacitive-coupling the others, the authors realize a three-peak, tunable frequency response whose gyration points align with transmission peaks, enabling on-chip integration without external matching networks. The experimental results, backed by a dissipative EMP model, yield quantitative access to EMP velocities, gate capacitance, and dissipation, and they demonstrate robust gyration up to $f \sim 1$ GHz with magnetic-field tunability. This approach offers a promising path toward scalable, low-loss non-reciprocal components for quantum information processing and interconnects, with potential extensions to magnetic-field-free platforms and gate-tunable variants.
Abstract
Non-reciprocal microwave components are indispensable in quantum information processing and cryogenic measurement. Conventional implementations, however, are bulky and incompatible with on-chip scalable integration. Recent efforts to develop compact on-chip alternatives often rely on active modulation or complex circuit architectures, which introduce additional losses and degrade performance. We demonstrate the realization of compact, self-impedance-matched gyrators based on edge magnetoplasmons in a two-dimensional electron gas. Gyrators can be used as building blocks for other non-reciprocal elements such as isolators and circulators. Our devices achieve gyration from 0.2 to 2 GHz, tunable by moderate out-of plane magnetic fields below 400 mT, and sub-mm footprint, two orders of magnitude smaller than conventional ferrite-based components. Using an electrode geometry predicted to minimize reflections, we achieve insertion losses as low as 2 to 4 dB. The self-matched design framework we utilize is broadly applicable, and can be implemented in a wide variety of non-reciprocal device architectures.
