Microscopic Origin of Polarization-Controlled Magnetization Switching in FePt/BaTiO$_3$
Qurat-ul-ain, Thi H. Ho, Soon Cheol Hong, Dorj Odkhuu, S. H. Rhim
TL;DR
The paper tackles voltage-controlled magnetization in FePt/BaTiO$_3$ by combining first-principles calculations with a strain-polarization framework. It identifies an interfacial orbital-reconstruction mechanism that yields a large magnetoelectric coefficient $α_I$ and reveals a strain-induced spin-reorientation around $η \approx 2\%$ driven by competition between uniaxial interfacial anisotropy and magnetoelastic energy, all modulated by interfacial Pt–d orbital SOC. The work provides microscopic insight into strain-engineered magnetoelectricity and outlines a concrete design path for ultra-low-power voltage-controlled magnetic memory. The findings map a route to integrate polarization control with SOC-enabled interfacial physics in FePt/BTO heterostructures for spintronic applications, highlighting a practical pathway for low-power devices.
Abstract
Electric-field driven magnetization switching in FePt/BaTiO$_3$ (001) is demonstrated through first-principles calculations. The magnetic easy axis of FePt layer undergoes a transition from in-plane to perpendicular direction upon ferroelectric polarization reversal, a process sensitively controlled by epitaxial strain with threshold strain strain($η$) $η\approx\%$. At this phenomena, a large interfacial magnetoelectric coupling ($α_I = 3.6 \times 10^{-10}$ G$\cdot$cm$^2$/V) is responsible, stemming from the orbital reconstruction. In particular, the redistribution of Pt-$d$ orbital occupancy alters spin-orbit coupling, thereby tuning the competition between magnetic anisotropy ($K_i$) and magnetoelastic energy ($b_1$). Our work clarifies the fundamental physics of strain-engineered magnetoelectricity and suggests a concrete pathway for designing ultra-low-power voltage-controlled magnetic memory.
