Ferroelectric switching at edge dislocations in BaTiO$_3$ modelled at the atomic scale
Himal Wijekoon, Pierre Hirel, Anna Grünebohm
TL;DR
The study addresses the lack of an atomistic picture of how line defects, specifically <100> edge dislocations, influence ferroelectric switching in BaTiO3. It employs an isotropic core-shell potential within atomistic simulations to model a pair of dislocations ( Burgers vectors $\vec{b}=\pm[100]$) embedded in a tetragonal BaTiO3 matrix and applies electric fields along the three Cartesian directions, tracking switching via local dipoles $u_k$, macroscopic polarization $\mathbf{P}$, and strain $\epsilon_{ii}$. The results show that dislocation cores can nucleate switching for all field directions, with the strongest coupling when the field is parallel to the Burgers vector; coercive fields shift to $E_c \approx 7$, 6, and 8 MV/cm for $E_x$, $E_y$, and $E_z$ respectively, and remnant polarization $P_r$ remains around $0.39$–$0.43$ C/m$^2$. Additionally, 180° walls can be pinned by the cores due to compressive strain, reducing the overall switchable polarization. These atomistic insights illuminate defect-mediated tuning of ferroelectric switching and offer design guidance for engineering dislocation structures at interfaces or under high-temperature deformation to tailor device performance.
Abstract
Ferroelectric switching governs the functional properties of ferroelectric perovskites. It is widely accepted that this switching depends on domain nucleation and pinning and that these processes can be controlled by the defect structure. However, an atomistic picture of the influence of one important class of defects - dislocations on ferroelectric switching is missing. This is an important gap in knowledge as dislocations cannot be avoided at interfaces and can also be engineered by plastic deformation at high temperatures. Using atomistic simulations, we show how the cores of $\langle100\rangle$ edge dislocations in BaTiO$_3$ can either act as nucleation centers for ferroelectric switching or pin walls depending on the direction of the applied field. The coupling between electric field and polarization is strongest when the field is applied parallel to the Burgers vector of the dislocation.
