Topological Polar Textures in Freestanding Ultrathin Ferroelectric Oxides
Franco N. Di Rino, Tim Verhagen
TL;DR
This work addresses the rich topology of polarization in freestanding ultrathin ferroelectric oxides, using a first-principles-derived core-shell model to map how polarization textures in BaTiO$_3$ evolve with layer thickness $N_z$ and temperature. The authors perform large-scale molecular dynamics simulations in a freestanding geometry, varying lateral sizes and thicknesses, and analyze both real-space polarization patterns and their structure factors, including the response to time-dependent THz fields. They identify distinct low-temperature textures—wave-helix and chiral-bubble states with near-degenerate energies (difference ~ $0.3$ meV per formula unit)—and a higher-temperature vortex-labyrinthine regime with tetratic orientational correlations, transitioning to isotropic fluctuations as $T$ rises. Crucially, they demonstrate reversible switching between textures via static and time-dependent electric fields, suggesting a route to dynamically engineer topological states in nanoscale ferroelectrics and highlighting the potential of freestanding oxide layers as minimal platforms for topological ferroic phenomena. The results connect 2D material-inspired design principles to complex oxide physics, offering insights for future ferroic devices and nonlinear phononics-driven control of polarization textures.
Abstract
The remarkable advances achieved in two-dimensional materials are now being directly transposed to low-dimensional oxides. Here we show using first-principles-based atomistic simulations that ultrathin freestanding ferroelectric layers host a rich variety of polar states, from liquid-like ferroelectric domains with long-range orientational order to helix-wave and chiral bubbles configurations reminiscent of those observed in twisted freestanding oxide layers. Time-dependent electric fields enable reversible control, revealing freestanding oxide layers as ideal platforms to explore complex polar states and their potential applications in future ferroic devices.
