An optical transistor of the nonlinear resonant structure
Jongbae Kim
TL;DR
An all-optical transistor is realized by exploiting cascaded second-order nonlinear interactions inside a nonlinear resonant structure to achieve simultaneous amplification and switching. The authors analyze two implementations: a single-frequency scheme based on cascaded SHG and inverse SHG (SHG/iSHG) and a dual-frequency scheme based on cascaded SHG and optical parametric amplification (SHG/OPA); for each scheme they derive exact analytical solutions and confirm them with numerical simulations, predicting nonlinear transparency and robust cascadability. Quantitatively, the single-frequency design yields a power transfer ratio $\alpha_{TR}$ around 4.8 and a power amplification factor $\beta_{AF}$ around 48, while the dual-frequency design reaches $\alpha_{TR}\approx 52$ and $\beta_{AF}\approx 5.2\times10^{2}$, with operation at milliwatt input powers and feasible LiNbO$_3$ platforms. The work provides a physically feasible, scalable route to all-optical transistors for high-speed, low-power integrated photonics, with potential extensions to terahertz regimes and Fabry–Perot microcavity implementations.
Abstract
An optical transistor capable of simultaneous amplification and switching is theoretically proposed via cascaded second-order nonlinear interactions in a resonant structure. Two distinct operational schemes are analyzed. A single frequency scheme employs cascaded second harmonic generation and inverse second harmonic generation (SHG/iSHG) using two Type-I SHG interactions, whereas a dual frequency scheme employs cascaded SHG and optical parametric amplification (SHG/OPA). Exact theoretical solutions and numerical calculations show cascadable amplification and digital on/off switching. A new optical phenomenon of nonlinear transparency is predicted by the theoretical solutions and confirmed by the numerical solutions in each scheme of the cascaded SHG/iSHG and SHG/OPA. The single and dual frequency configurations satisfy the cascadability and fan-out criteria with power transfer ratios of 4.838 and 52.26 and power amplification factors of 48.38 and 522.6, respectively. These results indicate transistor-like performance at input powers in the milliwatt range, readily supplied by laser diodes. The proposed structure establishes a physically feasible and practically scalable route to optical transistors operating at high speed and low power for integrated photonic circuits, with broad applications in all optical communication and computing.
