Comment on "Electrostatics-induced breakdown of the integer quantum Hall effect in cavity QED''

Abstract

We comment on the preprint arXiv:2511.04744 by Andolina et al.

Figures (1)

• Figure 1: Top: schematic of the device geometry in Ref. Appugliese2022. A semiconductor heterostructure hosts a two-dimensional electron gas (2DEG) confined in the $x$--$y$ plane, with $z$ the growth direction. The semiconductor mesa is laterally etched, defining an edge at $x=0$, and is coupled to a nearby metallic element of a split-ring resonator separated from the semiconductor surface by an air gap of width $d$. Ionized donors in the barrier region supply the doping electronic charge. Bottom: electrostatic potential energy $U(x)$ experienced by an electron in the 2DEG as a function of the lateral coordinate $x$. The Schottky barrier $U_S$ is set by the surface states at the GaAs interface.