Correlation-driven branch in doped excitonic insulators
Tatsuya Kaneko, Ryota Ueda, Satoshi Ejima
TL;DR
This work addresses how carrier doping reshapes the spectrum of a one-dimensional excitonic insulator and whether a doping-induced in-gap branch signals electron-hole correlations. Using matrix-product-state-based DMRG/TEBD, the authors compute the single-particle spectrum $A(k,\omega)$ and the optical conductivity $\sigma(\omega)$ in a correlated two-band model, and they dissect the origin of the in-gap branch by decomposing the $a$-orbital creation operator into singly-occupied and excitonic components, linking the branch to excitonic dynamics. The key finding is a robust doping-induced in-gap branch arising from the $a$-orbital sector, with spectral weight transfer toward $E_F$ and a growing Drude response; the in-gap feature is tied to excitonic correlations via an effective exchange scale $J\simeq \frac{4 t_a t_b}{U}$. This provides a concrete spectral signature of electron-hole correlations in doped excitonic insulators and offers guidance for interpreting experiments on materials such as Ta$_2$NiSe$_5$, while highlighting directions for incorporating lattice and spin degrees of freedom in future work.
Abstract
We investigate the spectral properties of a doped one-dimensional excitonic insulator. Employing matrix-product-state-based methods, we compute the single-particle spectrum and optical conductivity in a correlated two-band model. Our numerical calculation reveals the emergence of a correlation-driven in-gap branch in the doped state. The origin of the in-gap branch is examined by decomposing the propagation dynamics of a single particle, elucidating that the doping-induced branch is associated with excitonic correlations. Our demonstrations suggest that the doping-induced branch can serve as an indicator of electron-hole correlations.
