Spectral stability of cavity-enhanced single-photon emitters in silicon
Johannes Früh, Fabian Salamon, Andreas Gritsch, Alexander Ulanowski, Andreas Reiserer
TL;DR
This work tackles the problem of spectral instability in silicon-based single-photon emitters by embedding Er:Si in high-$Q$ Fabry-Perot cavities with large mode volumes, enabling both reduced dopant concentration and greater emitter-surface separation. The approach yields a fivefold reduction in spectral-diffusion linewidth to 4.0(2) MHz and extends the optical coherence time to 20(1) µs, aided by isotopically purified $^{28} ext{Si}$ that suppresses nuclear-spin noise. Laser-induced instantaneous spectral diffusion remains a limiting factor, scaling with pulse energy and duration, but the Fabry-Perot platform demonstrates clear improvements over nanophotonic devices, achieving near-lifetime-limited coherence under lower noise conditions. Overall, the results establish a path toward spectrally stable, multiplexed spin-photon interfaces in silicon, with implications for quantum networking and distributed quantum information processing, by combining large-mode-volume cavities, isotopic purification, and low dopant concentrations.
Abstract
The unrivaled maturity of its nanofabrication makes silicon a promising hardware platform for quantum information processing. To this end, efficient single-photon sources and spin-photon interfaces have been implemented by integrating color centers or erbium dopants into nanophotonic resonators. However, the optical emission frequencies in this approach are subject to temporal fluctuations on both long and short timescales, which hinders the development of quantum applications. Here, we investigate this limitation and demonstrate that it can be alleviated by integrating the emitters into Fabry-Perot instead of nanophotonic resonators. Their larger optical mode volume enables both increasing the distance to crystal surfaces and operating at a lower dopant concentration, which reduces implantation-induced crystal damage and interactions between emitters. As a result, we observe a fivefold reduction of the spectral diffusion linewidth down to 4.0(2) MHz. Calculations and experimental investigations of isotopically purified 28-Si crystals suggest that the remaining spectral instability is caused by laser-induced electric-field fluctuations. In direct comparison with a nanophotonic device, the instability is significantly reduced at the same intracavity power, enabling a tenfold increase of the optical coherence time up to 20(1) microseconds. These findings represent a key step towards spectrally stable spin-photon interfaces in silicon and their potential applications in quantum networking and distributed quantum information processing.
