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Photoelectron Spectroscopy Study of U-Te Thin Films: A Unified Perspective of Hybridization Effects across Compositions

E. A. Tereshina-Chitrova, S. G. Alex, O. Koloskova, L. Havela, L. Horak, O. Romanyuk, F. Huber, T. Gouder, M. Divis

TL;DR

This work addresses how U–Te hybridization evolves across the uranium telluride series by combining in situ photoelectron spectroscopy on clean, composition-tuned thin films with uniform first-principles calculations. The authors synthesize 10–30 nm U–Te films under ultra-high vacuum with controlled Te:U ratios, perform XPS and UPS to track core-level shifts, line shapes, and valence-band signatures, and compare with FPLO and (L)APW+lo LSDA calculations to quantify charge-transfer and occupancy trends. They observe systematic core-level broadening, binding-energy shifts, and evolving 5f/6d/Te 5p character across the series, including UTe2’s intermediate-valence behavior, which is corroborated by the calculations showing a reduced U-5f occupation with higher Te content. Overall, the study demonstrates that thin-film photoemission provides a robust route to map electronic-structure trends in heavy-element chalcogenides and links surface spectroscopy to bulk-like electronic ground states.

Abstract

Uranium tellurides span magnetic and superconducting ground states, yet systematic electronic-structure information across the U-Te series remains scarce. In this study, we perform photoemission measurements on freshly prepared UxTey thin films covering the range of bulk stoichiometries under ultra-high vacuum (10^-9 Pa), enabling clean surfaces and compositions matching bulk phases, including the celebrated UTe2. X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS) reveal consistent evolution of the U 4f and Te 3d core levels and valence states across the series, in good agreement with the limited bulk data. Supported by uniform ab initio calculations for all U-Te compounds, we identify systematic trends in U-Te hybridization and charge-transfer effects across the series. These results establish thin-film photoemission as a reliable route for mapping electronic-structure trends in tellurides of heavy elements with diverse electronic ground states.

Photoelectron Spectroscopy Study of U-Te Thin Films: A Unified Perspective of Hybridization Effects across Compositions

TL;DR

This work addresses how U–Te hybridization evolves across the uranium telluride series by combining in situ photoelectron spectroscopy on clean, composition-tuned thin films with uniform first-principles calculations. The authors synthesize 10–30 nm U–Te films under ultra-high vacuum with controlled Te:U ratios, perform XPS and UPS to track core-level shifts, line shapes, and valence-band signatures, and compare with FPLO and (L)APW+lo LSDA calculations to quantify charge-transfer and occupancy trends. They observe systematic core-level broadening, binding-energy shifts, and evolving 5f/6d/Te 5p character across the series, including UTe2’s intermediate-valence behavior, which is corroborated by the calculations showing a reduced U-5f occupation with higher Te content. Overall, the study demonstrates that thin-film photoemission provides a robust route to map electronic-structure trends in heavy-element chalcogenides and links surface spectroscopy to bulk-like electronic ground states.

Abstract

Uranium tellurides span magnetic and superconducting ground states, yet systematic electronic-structure information across the U-Te series remains scarce. In this study, we perform photoemission measurements on freshly prepared UxTey thin films covering the range of bulk stoichiometries under ultra-high vacuum (10^-9 Pa), enabling clean surfaces and compositions matching bulk phases, including the celebrated UTe2. X-ray and ultraviolet photoelectron spectroscopy (XPS/UPS) reveal consistent evolution of the U 4f and Te 3d core levels and valence states across the series, in good agreement with the limited bulk data. Supported by uniform ab initio calculations for all U-Te compounds, we identify systematic trends in U-Te hybridization and charge-transfer effects across the series. These results establish thin-film photoemission as a reliable route for mapping electronic-structure trends in tellurides of heavy elements with diverse electronic ground states.
Paper Structure (11 sections, 11 figures)

This paper contains 11 sections, 11 figures.

Figures (11)

  • Figure 1: (Left) U-4f core-level spectra of U-Te thin films, measured for varying Te:U ratios, display the 4f$_{7/2}$ and 4f$_{5/2}$ peaks, separated by 11 eV due to spin-orbit interaction. (Right) For Te, the evolution of the dominant core-level line Te-3d$_{5/2}$ normalized to the maximum of its intensity is shown for various Te:U concentrations (the Te-3d$_{3/2}$ line is located at approx. 583 eV).
  • Figure 2: Binding energy shifts for the dominant U-4f$_{7/2}$ and Te-3d$_{5/2}$ core-level lines as compared to $\alpha$-U (the reference position is at 377.3±0.1 eV) and pure Te (the reference position is at 573.1±0.1 eV) in U-Te films. The size of the data points includes the estimated experimental error.
  • Figure 3: Normalized He II UPS spectra for the initial $\alpha$-U film compared with various U-Te composition films. For the UTe$_2$ thin film, we also show the XPS data, scaled to match the UPS data. Vertical solid line marks the Fermi energy $E_{\mathrm{F}}$ = 0, while broken vertical lines serve as visual guides.
  • Figure 4: Comparison of He II with He I UPS spectra for selected U-Te films compositions.
  • Figure 5: The evolution of the U-6p$_{3/2}$ emission across various U-Te compositions. The U6p$_{1/2}$ is located at higher binding energies (25-27 eV).
  • ...and 6 more figures