Raman scattering fingerprints of the charge density wave state in one-dimensional NbTe$_4$
Natalia Zawadzka, Cem Sevik, Zahir Muhammad, Zia Ur Rehman, Weisheng Zhao, Adam Babiński, Maciej R. Molas
TL;DR
The study probes the charge-density wave state in NbTe4 using resonant and polarization-resolved Raman scattering, supported by room-temperature X-ray diffraction and DFT phonon calculations. It identifies 25 Raman-active phonon modes at 5 K and 15 at 300 K under backscattering, with clear polarization selection revealing strong symmetry coupling to the crystal axes. Temperature-dependent measurements show a ICDW to CCDW transition with pronounced hysteresis around 45–90 K and a warming-rate dependent transition temperature, indicating finite CDW-domain nucleation kinetics. The findings assign a structural link between the observed Raman features and the P4/ncc to P4/mcc phase transition and highlight potential relevance for memory-device applications due to the kinetic control of the CDW phases.
Abstract
Charge-density waves (CDWs) are ordered quantum states of conduction electrons accompanied by periodic lattice distortions. Raman scattering (RS) spectroscopy is therefore well suited for probing CDW-induced structural modulations. We investigate the CDW state in quasi-one-dimensional NbTe$_4$ using RS spectroscopy. At $T$=5~K, the resonantly enhanced Raman spectrum exhibits 25 phonon modes. Polarization-dependent measurements reveal a strong coupling between phonon-mode symmetry and crystallographic symmetry, with modes polarized parallel or perpendicular to the crystallographic $c$-axis, along which the one-dimensional structure is elongated. Temperature-dependent RS measurements identify a transition between commensurate and incommensurate CDW phases, accompanied by pronounced thermal hysteresis, with transition temperatures of approximately 45~K upon cooling and 90~K upon warming. The hysteresis width depends on the warming rate, indicating a finite nucleation rate of CDW domains and suggesting potential relevance for memory-device applications.
