Classification and design of two-dimensional altermagnets
Sike Zeng, Dong Liu, Hongjie Peng, Chang-Chun He, Xiao-Bao Yang, Yu-Jun Zhao
TL;DR
This article surveys two-dimensional altermagnets, a class of collinear antiferromagnets with zero net moment but nonrelativistic spin splitting governed by spin-group symmetry. It establishes a symmetry-based classification, catalogs monolayer candidates, and details strategies to engineer altermagnetism in 2D via stacking, multicomponent design, adsorption, electric fields, structural distortion, strain, and organic frameworks. The work highlights potential spintronic, valleytronic, and topological applications, including altermagnetically induced tunneling magnetoresistance and quantum anomalous Hall effects, while candidly addressing experimental and theoretical challenges such as ground-state determination and SOC effects. By providing design rules and a roadmap for synthesis and characterization, the paper aims to accelerate experimental realization and device integration of 2D altermagnets with high spin splitting and tunable functionalities.
Abstract
Altermagnets -- newly identified collinear antiferromagnets -- carry zero net moment with non-relativistic, spin-polarized bands, distilling the best of ferromagnets and antiferromagnets into a single spintronic platform. Shrunking to the two-dimensional limit, they inherit the tunability of two-dimensional crystals while adding symmetry-protected spin splitting, a combination now driving intense experimental interest. Here, we review the symmetry classification of two-dimensional altermagnets based on spin-group theory and survey the growing list of candidate materials, emphasizing those with large spin splitting for experimental realization. We then examine strategies for engineering two-dimensional altermagnetism. This Review aims to consolidate theoretically proposed candidate materials and realization strategies for two-dimensional altermagnets, providing insights for future experimental efforts in this emerging field.
