A Neuroevolution Potential for Gallium Oxide: Accurate and Efficient Modeling of Polymorphism and Swift Heavy-Ion Irradiation
Yaohui Gu, Binbo Li, Lingyang Jiang, Yuhui Hu, Wenqiang Liu, Lijun Xu, Pengfei Zhai, Jie Liu, Jinglai Duan
TL;DR
This work addresses the challenge of accurately modeling the polymorphic and nonequilibrium behavior of Ga2O3 by developing a neuroevolution potential with an energy-dependent training weighting. The NEP-based MLIP, implemented in GPUMD, outperforms the state-of-the-art tabGAP in energy, force, and virial predictions while delivering high computational throughput. Augmenting the training data with gamma phase and beta heating–cooling pathways improves extrapolation and yields gamma phase accuracy near 3 meV/atom, enabling reliable irradiation simulations. Applying the augmented NEP to swift heavy-ion irradiation of beta-Ga2O3, the authors reproduce core–shell ion tracks and track diameters consistent with experiments, demonstrating the method’s potential for large-scale, device-relevant atomistic modeling.
Abstract
Gallium oxide (Ga2O3) is a wide-bandgap semiconductor with promising applications in high-power and high-frequency electronics. However, its complex polymorphic nature poses substantial challenges for fundamental studies, particularly in understanding phase-transformation behaviors under nonequilibrium conditions. Here, we develop a robust, accurate, and computationally efficient machine-learning interatomic potential (MLIP) for Ga2O3 based on the neuroevolution potential (NEP) framework combined with an energy-dependent weighting strategy. The resulting NEP potential demonstrates clear advantages over the state-of-the-art tabGAP potential with respect to both accuracy and computational efficiency. Furthermore, we introduce a physically process-oriented sampling strategy to systematically augment the training dataset, thereby enhancing the MLIP performance for targeted physical phenomena. As a representative application, a dedicated NEP potential is constructed for swift heavy-ion (SHI) irradiation simulations of \b{eta}-Ga2O3. The simulated results are in quantitative agreement with experimental observations and provide a consistent physical explanation for the reported experimental discrepancies regarding phase transformations in the ion track of \b{eta}-Ga2O3.
