Quantifying the Relationship Between Strain and Bandgap in Thin Ga$_2$Se$_2$
Lottie L. Murray, Eric Herrmann, Igor Evangelista, Anderson Janotti, Xi Wang, Matthew F. Doty
TL;DR
The paper addresses how strain modulates the bandgap in 2D Ga2Se2 and how to deterministically design strain-induced bandgap profiles. The authors pattern substrates to create biaxial and uniaxial regions, map local strain with AFM-constrained COMSOL simulations, and map PL shifts with hyperspectral imaging, validating gauge factors against DFT. They report beta_exp = -275.4 meV/% and alpha_exp = -116.1 meV/% that align with DFT predictions, and show a simple model DeltaE approx beta_exp*(epsilon_1+epsilon_2)/2 + alpha_exp*|epsilon_1-epsilon_2|/2 can predict multiaxial bandgap shifts with <10% error. This work enables deterministic, spatially-resolved bandgap engineering in Ga2Se2 with implications for scalable quantum emitter arrays.
Abstract
We present a rigorous analysis that combines theory, simulation, and experimental measurements to quantify the relationship between strain and bandgap in two dimensional gallium selenide (Ga$_2$Se$_2$). Experimentally, we transfer thin Ga$_2$Se$_2$ flakes onto patterned substrates to deterministically induce multiaxial localized strain. We quantify the local strain using a combination of atomic force microscopy (AFM) measurements and COMSOL Multiphysics simulation. We then experimentally map the strain-induced bandgap shifts using high-resolution hyperspectral PL imaging to generate a robust and statistically significant dataset. We systematically fit this data to extract gauge factors that relate the bandgap shift to the local uniaxial and biaxial strain. We then compute the uniaxial and biaxial strain gauge factors via density functional theory (DFT) and find excellent agreement with the experimentally-determined values. Finally, we show that a simple model that computes bandgap shifts from the local uniaxial and biaxial strain predicts the observed multiaxial bandgap shift with less than 10\% error. The combined results provide a framework for deterministic realization of tailored bandgap profiles induced by controlled strain applied to Ga$_2$Se$_2$, with implications for the future realization of localized quantum emitters for quantum photonic applications.
