Physics-constrained Gaussian Processes for Predicting Shockwave Hugoniot Curves
George D. Pasparakis, Himanshu Sharma, Rushik Desai, Chunyu Li, Alejandro Strachan, Lori Graham-Brady, Michael D. Shields
TL;DR
This work addresses predicting shock-response Hugoniot states from limited molecular-dynamics data by embedding Rankine-Hugoniot constraints and thermodynamic laws directly into a Gaussian Process surrogate. The method constructs a Taylor-series-based physics-informed covariance and uses a multi-wave Rankine-Hugoniot formulation to model the leading elastic wave and trailing plastic and phase-transformation waves, with uncertainty quantified via the GP posterior. Applied to 3C-SiC along the [001] direction, the approach yields thermodynamically consistent Hugoniot curves for $u_s$, $\rho$, $P$, and $T$ across regimes, and identifies regime transitions with quantified predictive uncertainty. This framework offers data-efficient, uncertainty-aware surrogates for shock physics and lays groundwork for active-learning–driven autonomous materials discovery under extreme conditions.
Abstract
A physics-constrained Gaussian Process regression framework is developed for predicting shocked material states along the Hugoniot curve using data from a small number of shockwave simulations. The proposed Gaussian process employs a probabilistic Taylor series expansion in conjunction with the Rankine-Hugoniot jump conditions between the various shocked material states to construct a thermodynamically consistent covariance function. This leads to the formulation of an optimization problem over a small number of interpretable hyperparameters and enables the identification of regime transitions, from a leading elastic wave to trailing plastic and phase transformation waves. This work is motivated by the need to investigate shock-driven material response for materials discovery and for offering mechanistic insights in regimes where experimental characterizations and simulations are costly. The proposed methodology relies on large-scale molecular dynamics which are an accurate but expensive computational alternative to experiments. Under these constraints, the proposed methodology establishes Hugoniot curves from a limited number of molecular dynamics simulations. We consider silicon carbide as a representative material and atomic-level simulations are performed using a reverse ballistic approach together with appropriate interatomic potentials. The framework reproduces the Hugoniot curve with satisfactory accuracy while also quantifying the uncertainty in the predictions using the Gaussian Process posterior.
