Layer Hall effect induced by altermagnetism
Fang Qin, Rui Chen
TL;DR
This work shows that Bi$_2$Se$_3$, when placed in proximity to $d$-wave altermagnets and subjected to an in-plane layer magnetic field, can realize distinct topological Hall responses via surface Dirac gaps. By controlling Néel-vector alignment (antiparallel vs parallel) on the top and bottom surfaces, the system hosts a layered sequence of phases: a half-quantized layer Hall effect with zero net Hall for antiparallel altermagnets, and a fully quantized anomalous Hall (Chern insulator) state for parallel alignment, with intermediate single-surface half-quantized cases. The Hall response is tunable by the in-plane field orientation and can be made observable with a perpendicular electric field that breaks exact surface cancellation, enabling experimental detection of the layer Hall effect. Collectively, the results establish a versatile route to engineer altermagnet-induced topological phases in ferromagnetic topological insulators and to realize layer-resolved topological transport phenomena.
Abstract
In this work, we propose a scheme to realize the layer Hall effect in the ferromagnetic topological insulator Bi$_2$Se$_3$ via proximity to $d$-wave altermagnets. We show that an altermagnet and an in-plane magnetic field applied near one surface gap the corresponding Dirac cone, yielding an altermagnet-induced half-quantized Hall effect. When altermagnets with antiparallel Néel vectors are placed near the top and bottom surfaces, giving rise to the layer Hall effect with vanishing net Hall conductance, i.e., the altermagnet-induced layer Hall effect. In contrast, altermagnets with parallel Néel vectors lead to a quantized Chern insulating state, i.e., the altermagnet-induced anomalous Hall effect. We further analyze the dependence of the Hall conductance on the orientation of the in-plane magnetic field and demonstrate that the layer Hall effect becomes observable under a perpendicular electric field. Our results establish a route to engineer altermagnet-induced topological phases in ferromagnetic topological insulators.
