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AgenticTCAD: A LLM-based Multi-Agent Framework for Automated TCAD Code Generation and Device Optimization

Guangxi Fan, Tianliang Ma, Xuguang Sun, Xun Wang, Kain Lu Low, Leilai Shao

TL;DR

AgenticTCAD addresses the scarcity of open TCAD resources by building an expert-curated open TCAD dataset and fine-tuning a domain-specific language model to generate complete SDE/SDevice code from natural language. The authors then deploy a multi-agent NL-driven workflow that couples code generation with a reasoning agent to perform end-to-end NS-FET design, TCAD simulation, and iterative optimization, guided by IRDS-2024 metrics. On a 2 nm NS-FET, the framework achieves IRDS-2024 specifications in 4.2 hours, dramatically reducing the human effort from days to hours, while also providing energy-band diagrams to enhance interpretability. This work offers a scalable, data-driven pathway for automated DTCO device design and sets the stage for broader AI-assisted TCAD research and DTCO workflows.

Abstract

With the continued scaling of advanced technology nodes, the design-technology co-optimization (DTCO) paradigm has become increasingly critical, rendering efficient device design and optimization essential. In the domain of TCAD simulation, however, the scarcity of open-source resources hinders language models from generating valid TCAD code. To overcome this limitation, we construct an open-source TCAD dataset curated by experts and fine-tune a domain-specific model for TCAD code generation. Building on this foundation, we propose AgenticTCAD, a natural language - driven multi-agent framework that enables end-to-end automated device design and optimization. Validation on a 2 nm nanosheet FET (NS-FET) design shows that AgenticTCAD achieves the International Roadmap for Devices and Systems (IRDS)-2024 device specifications within 4.2 hours, whereas human experts required 7.1 days with commercial tools.

AgenticTCAD: A LLM-based Multi-Agent Framework for Automated TCAD Code Generation and Device Optimization

TL;DR

AgenticTCAD addresses the scarcity of open TCAD resources by building an expert-curated open TCAD dataset and fine-tuning a domain-specific language model to generate complete SDE/SDevice code from natural language. The authors then deploy a multi-agent NL-driven workflow that couples code generation with a reasoning agent to perform end-to-end NS-FET design, TCAD simulation, and iterative optimization, guided by IRDS-2024 metrics. On a 2 nm NS-FET, the framework achieves IRDS-2024 specifications in 4.2 hours, dramatically reducing the human effort from days to hours, while also providing energy-band diagrams to enhance interpretability. This work offers a scalable, data-driven pathway for automated DTCO device design and sets the stage for broader AI-assisted TCAD research and DTCO workflows.

Abstract

With the continued scaling of advanced technology nodes, the design-technology co-optimization (DTCO) paradigm has become increasingly critical, rendering efficient device design and optimization essential. In the domain of TCAD simulation, however, the scarcity of open-source resources hinders language models from generating valid TCAD code. To overcome this limitation, we construct an open-source TCAD dataset curated by experts and fine-tune a domain-specific model for TCAD code generation. Building on this foundation, we propose AgenticTCAD, a natural language - driven multi-agent framework that enables end-to-end automated device design and optimization. Validation on a 2 nm nanosheet FET (NS-FET) design shows that AgenticTCAD achieves the International Roadmap for Devices and Systems (IRDS)-2024 device specifications within 4.2 hours, whereas human experts required 7.1 days with commercial tools.
Paper Structure (14 sections, 7 figures, 2 tables)

This paper contains 14 sections, 7 figures, 2 tables.

Figures (7)

  • Figure 1: Overall flow of TCADAgent. (a) Dataset construction flow; (b) Supervised fine-tuning (SFT) flow; (c) Multi-Agent flow for End-to-end device TCAD simulation and optimization based on natural language.
  • Figure 2: Prompt templates and examples used in our framework. (a) Data Construction, (b) Code Generation and (c) Device Optimization.
  • Figure 3: SFT process: (a) training and evaluation loss, and (b) gradient norm.
  • Figure 4: Case study results with our TCAD code generation LLM with tailored meshing strategies. (a) 2D n-type MOSFET with Gaussian doping profile and (d) the corresponding $C-V$ simulation. (b) P-type FinFET array and (e) the corresponding $I_d-V_d$ simulation. (c) InGaAs-based n-type FinFET with high-k/metal gate stack and (f) the corresponding $I_d-V_g$ simulation.
  • Figure 5: TCADAgent for NS-FET design and optimization: (a) device structure and cross-section, (b) $I_d-V_g$ before (blue) and after (red) optimization.
  • ...and 2 more figures