Applications of silicon carbide as window materials in atomic cells and atomic devices
Z. -P. Xie, C. -P. Hao, D. Sheng
TL;DR
The paper addresses the limitation of silicon-based anodically bonded atomic cells, which block beams with wavelengths shorter than around 1000 nm, by evaluating silicon carbide (SiC) windows as an alternative. The authors characterize SiC's wide band gap, high optical transmission, and superior thermal and mechanical properties, and demonstrate anodic bonding of SiC windows to borosilicate glass. They show that SiC windows enable high transmission with anti-reflection coatings, dramatically improved thermal management in vapor cells, and practical utility in multipass-cavity based comagnetometers, including external-mirror configurations and spin-noise measurements. The work suggests SiC-window cells can broaden optical access and improve measurement stability in compact atomic devices, with plans to integrate into next-generation precision measurement systems.
Abstract
Atomic cells made by anodically bonding silicon and borosilicate glasses are widely used in atomic devices. One inherent problem in these cells is that the silicon material blocks beams with wavelengths shorter than 1000 nm, which limits available optical accesses when alkali metal atoms are involved. In this work, we investigate the possibility of the silicon carbide material as an alternative of silicon materials in fabricating anodically bonded cells. We demonstrate that the optical, thermal and mechanical properties of silicon carbide help to improve the performance of atomic devices in certain applications.
