Charge order in the Pr substituted YBa$_2$Cu$_3$O$_7$ from high-field Hall effect measurements
C. M. Duffy, M. Altangerel, S. Badoux, D. Vignolles, T. Oustric, C. M. Moir, Keke Feng, A. Frano, M. B. Maple, L. Taillefer, C. Proust
TL;DR
This work investigates how Pr substitution in YBa$_2$Cu$_3$O$_{7-\delta}$ tunes hole doping and disorder, and whether it preserves the 2D charge-order–driven Fermi surface reconstruction seen in YBCO. Using high-field magnetotransport and Hall effect measurements up to $65$ T on Pr-YBCO crystals with $x=0.2$–$0.45$, the authors identify a Hall sign change at a temperature $T_0$ that shifts with Pr content, signaling FSR due to charge order and an electron pocket in the reconstructed Fermi surface. The Pr-YBCO phase diagram is qualitatively similar to YBCO, but the competition between charge order and superconductivity is weaker, likely because of disorder and shorter CO coherence lengths; the work also discusses the potential presence of 3D CO in Pr-YBCO, though evidence remains inconclusive. Overall, the results support the view that the in-plane carrier density, rather than the specific doping mechanism, governs the emergence of CO and FSR in cuprates, while disorder tends to smear transitions and suppress conventional CO–SC competition.
Abstract
The mechanism of doping in the composite Pr$_x$Y$_{1-x}$Ba$_2$Cu$_3$O$_{7-δ}$ (Pr-YBCO) system is distinct from that of pure YBCO, offering a means to explore the requirements for the numerous electronic orders appearing in the phase diagram. One such example is the ubiquitous 2D charge order and concomitant Fermi surface reconstruction in underdoped YBCO. Here, using magnetotransport and Hall effect measurements, we find signatures of a Fermi surface reconstruction similar to that in pure YBCO indicating the presence of 2D charge order in Pr-YBCO. Additionally, we find that the phase diagrams of Pr-YBCO and YBCO are decidedly symmetric despite the additional disorder in the former and the distinction between hole depletion through Pr substitution and through O reduction. This indicates that while the mechanism of doping differs, the amount of charge carriers in the planes is the most important factor governing the electronic orders in these systems.
