Detection of Image Potential States above the vacuum level in GeTe
Frédéric Chassot, Aki Pulkkinen, Ján Minár, Gunther Springholz, Matthias Hengsberger, Claude Monney
TL;DR
This work reveals, for the first time in a semiconductor, image-potential states (IPS) that extend up to $0.8\ \mathrm{eV}$ above the vacuum level on the ferroelectric GeTe(111) surface. By combining time- and angle-resolved photoemission spectroscopy (TR-ARPES) with Bloch spectral-function calculations, the authors resolve three IPS with parabolic in-plane dispersions, extract their binding energies, and show they follow a hydrogen-like Rydberg series $E_B(n)=\frac{\epsilon-1}{\epsilon+1}\cdot\frac{0.85\ \mathrm{eV}}{(n+a)^2}$. The unusually large extension above the vacuum is explained by a strong dipole coupling and a large reservoir of initial states that populate the IPS, together with a $1/z$-converging surface barrier that sustains the IPS in the vacuum region. These findings highlight the role of ferroelectric polarization in IPS formation and open avenues for spin-resolved and time-resolved studies of IPS dynamics in polar semiconductors.
Abstract
The ferroelectric semiconductor α-GeTe(111) has attracted significant attention in the last decade due to its unique properties, with extensive studies focusing on its occupied electronic bandstructure. In contrast, its unoccupied states - particularly those near the conduction band minimum - remain largely unexplored. In an effort to characterize those states, we surprisingly observe three image potential states (IPS) in α-GeTe(111) extending up to 0.8 eV above the vacuum level. Using time and angle-resolved photoemission spectroscopy, we resolve the full parabolic dispersions of the first three IPS and determine their binding energies. Our analysis, combined with Bloch spectral function calculations, reveals that the unexpected persistence of IPS above the vacuum level originates from strong dipole transitions and the presence of large electron reservoirs in GeTe.
