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Sensor free, self regulating thermal switching via anomalous Ettingshausen effect and spin reorientation in DyCo5

Shibo Wang, Hiroki Tsuchiura, Nobuaki Terakado

Abstract

We propose a sensor free, self regulating thermal switch that combines the anomalous Ettingshausen effect (AEE) with a temperature driven spin reorientation transition (SRT) in the rare earth cobalt compound DyCo$_5$. Using density functional theory and the Kubo linear-response formalism, we compute the anomalous Hall conductivity $σ_{xy}(\varepsilon)$ and the finite temperature anomalous Nernst conductivity $α_{xy}(T)$ for two magnetization directions, magnetization parallel and perpendicular to the crystallographic c axis. While the intrinsic $σ_{xy}$ at the Fermi level remains sizable for both orientations, $α_{xy}$ exhibits an about two orders of magnitude contrast in the SRT temperature window. This contrast is consistent with the low temperature Mott relation through the energy slope $\partial_\varepsilon σ_{xy}(\varepsilon)\rvert_{E_{\mathrm F}}$ and is traced to strongly peaked Berry curvature hot spots generated by spin orbit coupling induced avoided crossings of Co $3d$ bands. Combining $α_{xy}$ with longitudinal transport coefficients, we estimate device level metrics, namely the anomalous Nernst thermopower $S_{\mathrm{ANE}}$ and the Ettingshausen coefficient $Π_{\mathrm{AEE}}=T S_{\mathrm{ANE}}$, and demonstrate robust orientation controlled switching under a fixed in plane bias current. These results establish a materials based route to compact thermal control without external sensors or feedback electronics and provide a concrete example that the proposed principle can be realized in an existing ferromagnet.

Sensor free, self regulating thermal switching via anomalous Ettingshausen effect and spin reorientation in DyCo5

Abstract

We propose a sensor free, self regulating thermal switch that combines the anomalous Ettingshausen effect (AEE) with a temperature driven spin reorientation transition (SRT) in the rare earth cobalt compound DyCo. Using density functional theory and the Kubo linear-response formalism, we compute the anomalous Hall conductivity and the finite temperature anomalous Nernst conductivity for two magnetization directions, magnetization parallel and perpendicular to the crystallographic c axis. While the intrinsic at the Fermi level remains sizable for both orientations, exhibits an about two orders of magnitude contrast in the SRT temperature window. This contrast is consistent with the low temperature Mott relation through the energy slope and is traced to strongly peaked Berry curvature hot spots generated by spin orbit coupling induced avoided crossings of Co bands. Combining with longitudinal transport coefficients, we estimate device level metrics, namely the anomalous Nernst thermopower and the Ettingshausen coefficient , and demonstrate robust orientation controlled switching under a fixed in plane bias current. These results establish a materials based route to compact thermal control without external sensors or feedback electronics and provide a concrete example that the proposed principle can be realized in an existing ferromagnet.

Paper Structure

This paper contains 6 equations, 3 figures, 3 tables.

Figures (3)

  • Figure 1: Schematic of a self regulating thermal control device based on the anomalous Ettingshausen effect (AEE) and a spin reorientation transition (SRT). Here, $T$ denotes temperature, $\bm{M}$ magnetization, $\bm{J}_c$ charge current density, and $\bm{J}_q$ heat current density. (1) Initial state: the device is in contact with the object; both are at temperature $T$. Under a constant in plane $\bm{J}_c$, AEE generates a transverse $\bm{J}_q$ set by $\bm{M}$. (2) Object heated: the object temperature increases to $T+\delta T$. (3) Entering the SRT range: the device also warms toward $T+\delta T$; within the SRT interval $\bm{M}$ reorients ($\parallel c \leftrightarrow \perp c$), reversing or redirecting $\bm{J}_q$ so that heat is drawn from the object. (4) Negative feedback: cooling reduces $\delta T$ and the system relaxes toward $T$, achieving self regulated operation without external sensing.
  • Figure 2: Transport coefficients of DyCo$_5$ as functions of the chemical potential $\mu$ for two magnetization directions, $\bm{M}\parallel(100)$ and $\bm{M}\parallel(001)$. The chemical potential is varied within a rigid band approximation to indicate the carrier doping trend, and $\mu=0$ corresponds to the Fermi level ($E_F$). (a) Anomalous Hall conductivity (AHC) $\sigma_{xy}(\mu)$ in units of $10^{4}$ S/m. (b) Anomalous Nernst conductivity (ANC) $\alpha_{xy}(\mu)$ in units of A m$^{-1}$ K$^{-1}$. (c) Longitudinal conductivity shown as $\sigma_{yy}(\mu)/\tau$ in units of $10^{20}$ S m$^{-1}$ s$^{-1}$, where $\tau$ is the relaxation time. (d) Longitudinal Seebeck coefficient $S_{yy}(\mu)$ in units of $\mu$V/K. Panels (c) and (d) provide the longitudinal inputs required to evaluate the transverse thermopower due to ANE, $S_{\mathrm{ANE}}$, via Eq. \ref{['eq:sane_smallangle']}. A common color scheme is used across panels to distinguish $\bm{M}\parallel(100)$ and $\bm{M}\parallel(001)$.
  • Figure 3: Band dispersion and Berry curvature of DyCo$_5$ along the high symmetry path $\Gamma \to M \to K \to \Gamma \to A$ within the energy window $-0.5$ eV $<E<0.5$ eV. The upper panels show the band dispersion, while the lower panels plot the Berry curvature summed over occupied states, $\Omega_{z}(\bm{k})=\sum_{n} f(\varepsilon_{n\bm{k}})\,\Omega_{n,z}(\bm{k})$, which corresponds to the integrand of the intrinsic anomalous Hall conductivity up to a constant prefactor. (a) $\bm{M}\parallel c$ and (b) $\bm{M}\perp c$. In both cases $\Omega_{z}(\bm{k})$ is nearly zero over most of the path but exhibits two sharply peaked hot spots along $\Gamma \to A$, with opposite signs near $\Gamma$ and near $A$. Upon reorienting $\bm{M}$, the hot spot positions shift slightly along $\Gamma \to A$, resulting in a modest change in the separation between the two peaks. These hot spots coincide with band (avoided) crossings of Co $3d$ states in the dispersion, indicating that the orientation dependence of the thermoelectric Hall response originates from Berry curvature hot spots generated by spin orbit coupling near band degeneracies.