Oscillating electroosmotic flow in channels and capillaries with modulated wall charge distribution
A. Shrestha, E. Kirkinis, M. Olvera de la Cruz
TL;DR
This work analyzes AC electroosmosis in electrolyte-filled channels with spatially modulated wall charge, predicting time-dependent vortices whose sense reverses with the drive period $2\pi/\omega$. It provides analytical solutions for rectangular channels and cylindrical capillaries, revealing unidirectional transport in certain orientations and a nonzero longitudinal advective current that produces $I$-$V$ hysteresis with a defined memory time $\tau_M$ related to $\nu$ and $\kappa^2$ and a memconductance that can diverge or become negative as $V\to0$. Memory effects arise from the history-dependent advective flow, linking fluid dynamics to memristive-like conductance and suggesting potential for memory-enabled signal processing in ionically conducting systems. Overall, the results offer a reconfigurable route to control mixing, solute transport, pumping, and energy conversion in microfluidic devices, with connections to iontronic memory concepts and toroidal vortex structures in capillaries.
Abstract
Electrolyte-filled channels with modulated wall charge distribution subjected to an applied DC electric field, form time-independent vortices whose sense of circulation is determined by the field direction [Physical Review Letters $ \mathbf{75}, 755, (1995)$]. In this paper we show that an electrolyte in a channel or cylindrical capillary subjected to an external \emph{alternating} (AC) electric field gives rise to various laminar flow structures, including vortices whose sense of circulation changes with the period of oscillation of the applied AC field. The introduction of a period of oscillation lifts certain degeneracies associated with its time-independent counterpart. Although, in general, the mass flux vanishes, the charge flux is nonzero. The flow is accompanied by a longitudinal (oscillating) advective current that displays hysteresis accompanied by a diverging and negative self-similar conductance that depends on the applied voltage [Nano Letters $\mathbf{10}, 2674, (2010)$]. We show that this behavior can be interpreted with respect to a ``memory retention time'', that depends on frequency, viscosity and the Debye length and could thus form the impetus for investigating control protocols of signal carriers.
