Edge states of a Bi$_2$Se$_3$ nanosheet in a perpendicular magnetic field
Stan P. J. Koenis, Lucas Maisel Licerán, Henk T. C. Stoof
TL;DR
This work tackles the question of how edge states in Bi$_2$Se$_3$ nanosheets persist when a perpendicular magnetic field is applied. It develops an analytic framework that combines bulk Landau levels with Dirichlet-wall induced states (D-bulk, D-NLS, D-CLS) to describe the edge-state wave function in a semi-infinite geometry, validated by close agreement with numerical solutions. The method yields a precise edge-state dispersion $E(k_y)$ and provides insights into the role of boundary effects and symmetry breaking, showing that edge modes can remain robust even without time-reversal symmetry. The approach enables efficient computation of edge-state properties and local density of states, with potential applications to STM measurements and magneto-transport in topological insulator thin films.
Abstract
Conventional wisdom dictates that the conducting edge states of two-dimensional topological insulators of the Bi$_2$Se$_3$ family are protected by time-reversal symmetry. However, theoretical bulk calculations and a recent experiment show that the edge states persist in the presence of large external magnetic fields. To address this apparent contradiction, we have developed an analytical description for the edge-state wave function of a semi-infinite sample in a perpendicular magnetic field. Our description relies on the usual bulk Landau levels, together with additional states arising due to the presence of the hard wall, which are unnormalizable in the infinite system. The analytical wave functions agree extremely well with numerical calculations and can be used to directly analyze the behavior of the edge states in a magnetic field.
