Kerr effect induced by exchange interaction of electrons separated by a tunnel barrier in a double quantum well
V. K. Kalevich, K. V. Kavokin, M. M. Afanasiev, B. F. Gribakin, M. I. Kuzmenko, G. Karczewski, Yu. G. Kusrayev
TL;DR
The paper investigates Kerr-effect signals in a CdTe/Cd_{0.98}Mn_{0.02}Te double quantum well with a 5 ML separator, showing that interwell electron exchange couples exciton spins in the narrow well to the wide-well electron spin ensemble. A quantitative model incorporating exchange, precession, and sample reflectivity reproduces the observed Kerr spectra and extracts the interwell exchange constant, δ_e, from fits. Theoretical estimates yield δ_e ≈ (2.1 ± 0.3) × 10^{-15} eV cm^2, while experimental fits give δ_e^{exp} ≈ 0.9 × 10^{-15} eV cm^2, supporting the exchange mechanism. Overall, the work demonstrates that resonant Kerr-rotation spectroscopy can probe interwell spin interactions in tunnel-coupled semiconductor heterostructures and clarifies the role of barrier-mediated exchange in spin dynamics.
Abstract
In a structure with two tunnel-coupled quantum wells of different widths, the spin dynamics resulting from resonant pulsed optical pumping of the narrow-well exciton includes the wide-well electron magnetization dynamics. Our analysis shows that the effect is driven by electron exchange between narrow-well excitons and spin-polarized electrons in the wide well. A theoretical model of the spin Kerr effect has been developed accounting for the interwell electron spin exchange. In the studied double-well structure with CdTe and Cd$_{0.98}$Mn$_{0.02}$Te quantum wells and a well-separating barrier thickness of 5 monolayers (1.6 nm), the model accurately describes the experimental results and allows us to estimate the interwell electron exchange constant as $δ_{e} \approx 0.9\times10^{-15}~\textrm{eV}~\textrm{cm}^{2}$.
