Gate-Tunable Superconducting Spin Valve in a van der Waals Ferromagnet/Superconductor/Ferromagnet Trilayer
A. S. Ianovskaia, G. A. Bobkov, A. M. Bobkov, I. V. Bobkova
TL;DR
This work addresses how to electrically control superconducting spin-valve behavior in a vdW trilayer F1/S/F2 by tuning the ferromagnets' chemical potentials μ_{F1} and μ_{F2} with gate voltages. Using a minimal tight-binding model and a 12×12 Nambu-spin-layer Green's function, the authors solve the Gor'kov equations self-consistently to obtain the order parameter Δ and spectral properties, revealing gate-tunability among standard, inverse, and triplet SVE regimes. They show that the effective exchange field h_{eff} in the S layer, set by hybridization with the F spectra, dictates the SVE type, and that non-BCS Δ(T) behavior—such as reentrant superconductivity and bistability—emerges under gating even for parallel magnetizations. These results establish vdW F/S/F trilayers as a flexible platform for superconducting spintronics, enabling electrically reconfigurable proximity-induced phenomena and exotic superconducting states with potential for device applications.
Abstract
We theoretically demonstrate a gate-tunable superconducting spin valve effect (SVE) in a van der Waals (vdW) heterostructure composed of a monolayer superconductor (S) sandwiched between two ferromagnetic (F) monolayers (F/S/F). By electrostatically gating the ferromagnetic layers to modulate their chemical potentials, the system can be continuously tuned between the standard, inverse and triplet (non-monotonic) SVE regimes within the same device. This tunability originates from the gate-controlled hybridization between the superconducting and ferromagnetic electronic spectra, which determines the effective exchange field induced in the S-layer. Furthermore, we reveal that gating enables exotic, non-BCS temperature dependencies of the superconducting order parameter, including reentrant superconductivity, bistable states, first-order phase transitions, and the emergence of superconductivity at finite temperatures. Our results establish vdW F/S/F trilayers as a versatile and highly controllable platform for superconducting spintronics, where external gate voltages can selectively activate different spin-valve functionalities and unconventional superconducting states.
