High Fidelity Qubit Control in a Natural Si-MOS Quantum Dot using a 300 mm Silicon on Insulator Wafer
Xander Peetroons, Xunyao Luo, Tsung-Yeh Yang, Normann Mertig, Sofie Beyne, Julien Jussot, Yosuke Shimura, Clement Godfrin, Bart Raes, Ruoyu Li, Roger Loo, Sylvain Baudot, Stefan Kubicek, Shuchi Kaushik, Danny Wan, Takeru Utsugi, Takuma Kuno, Noriyuki Lee, Itaru Yanagi, Toshiyuki Mine, Satoshi Muraoka, Shinichi Saito, Digh Hisamoto, Ryuta Tsuchiya, Hiroyuki Mizuno, Kristiaan De Greve, Charles Smith, Helena Knowles, Andrew Ramsay
TL;DR
This work addresses the challenge of achieving high-fidelity single-qubit gates in natural silicon MOS quantum dots by combining fast ESR drive with real-time qubit-frequency feedback on a 300 mm industrial wafer. The authors demonstrate a 99.5% ± 0.3% average single-qubit fidelity via randomized benchmarking, supported by a driven coherence time $T^{Rabi}$ ≈ 11 μs at a Rabi frequency around 5 MHz and a Rabi Q-factor exceeding 50. Low-frequency magnetic and charge noise are characterized (σ_f ≈ 0.41 MHz; PSD ~ 1/f^{0.47}), yet the feedback and pulse-area calibration enable performance near the Rabi-limited bound $F_{limit} ≈ 1 - 1/(4 Q_{Rabi})$ ≈ 99.54%. The results highlight the feasibility of scalable quantum control in industrial silicon technology and point to routes for further improvements via faster feedback and reduced charge noise.
Abstract
We demonstrate high-fidelity single qubit control in a natural Si-MOS quantum dot fabricated in an industrial 300 mm wafer process on a silicon on insulator (SOI) wafer using electron spin resonance. A relatively high optimal Rabi frequency of 5 MHz is achieved, dynamically decoupling the electron spin from its 29-Si environment. Tracking the qubit frequency reduces the impact of low frequency noise in the qubit frequency and improves the $T^{Rabi}$ from 7 to 11 $μ$s at a Rabi frequency of 5 MHz, resulting in Q-factors exceeding 50. Randomized benchmarking returns an average single gate control fidelity of 99.5 $\pm$ 0.3%. As a result of pulse-area calibration, this fidelity is limited by the Rabi Q-factor. These results show that a fast Rabi frequency, low charge noise, and a feedback protocol enable high fidelity in these Si-MOS devices, despite the low-frequency magnetic noise.
