Exact and mean-field analysis of the role of Hubbard interactions on flux driven circular current in a quantum ring
Rahul Samanta, Santanu K. Maiti, Shreekantha Sil
TL;DR
This work addresses how electron-electron interactions and disorder govern the persistent current in flux-threaded Hubbard rings within a tight-binding framework. By combining exact diagonalization and Hartree-Fock mean-field methods, and introducing a LIN table formalism to efficiently build the full many-body Hamiltonian, the authors compute the ground-state energy $E_g(\phi)$ and the current $I(\phi) = -\partial E_g/\partial \phi$, along with localization via the inverse participation ratio $IPR$. The key finding is that the on-site interaction $U$ generally enhances current at both half- and low-filling regimes, while the nearest-neighbor interaction $V$ has a nontrivial, filling-dependent effect: it can suppress current at low filling but enhances it near half-filling up to a critical ratio $V \approx U/2$, with disorder further enriching these trends. An eigenstate localization analysis based on $IPR$ corroborates the interplay among $U$, $V$, filling, and disorder in shaping PC. The results identify parameter regimes where extended Hubbard interactions significantly boost PC, offering insights for reconciling theory with experiment and guiding extensions to longer-range hopping and finite-temperature effects.
Abstract
We investigate circular current in both ordered and disordered Hubbard quantum rings threaded by magnetic flux, employing exact diagonalization and the Hartree-Fock mean-field approach within the tight-binding framework. The influence of on-site and extended Hubbard interactions, disorder, and electron filling on the persistent current is systematically analyzed. To construct the full many-body Hamiltonian, we introduce a linear table formalism, which, to our knowledge, has been rarely used in this context. In ordered rings, the current decreases monotonically with increasing on-site repulsion, while the impact of the extended interaction depends strongly on the filling factor. At low filling, stronger extended interaction suppresses the current, whereas near half-filling, it enhances the current up to a critical ratio, half of the on-site strength, before reducing it. Disorder significantly modifies these behaviors, notably enhancing the current at less than quarter-filling with increasing extended interaction. The localization properties of eigenstates, examined via the inverse participation ratio, further support the crucial roles of filling and the interplay between on-site and extended interactions in governing persistent current.
