Andreev Optoelectronics
Benjamin Remez, Pouyan Ghaemi, Jay D. Sau, Mohammad Hafezi
TL;DR
This work develops a minimal model for coupling light to Andreev bound states in semiconductor-based SNS junctions, revealing two optical absorption resonances and a novel anomalous absorption mechanism that can populate an occupied ABS. By integrating out high-energy quasiparticles, the authors derive an effective optical–microwave transduction Hamiltonian, enabling coherent conversion between optical and microwave photons via the ABS. Using realistic Al–InAs parameters, they demonstrate phase-dependent absorption features and quantify the transduction pathways, highlighting the sensitivity of coupling to wavefunction overlaps and junction geometry. The results establish Andreev optoelectronics as a new platform that merges circuit quantum electrodynamics with quantum optics, enabling time-resolved control of Andreev parity and potential integration with quantum information protocols.
Abstract
Superconducting weak-link junctions host electron--hole hybridized excitations called Andreev bound states. These have attracted significant interest for the role they play in the device microelectronic operation and for quantum information applications. Andreev physics has so far been synonymous with the microwave range. However, the maturation of superconductor--semiconductor hybrid junctions opens the door to the characterization, and manipulation, of Andreev states by light. Here we introduce a model for light--Andreev interaction, with distinct features: Electrons transitioning into Andreev levels can sidestep Pauli exclusion, resulting in two optical absorption resonances separated by twice the bound state energy. One resonance populates the Andreev state and the other empties it; pumping both resets the junction and prevents saturation. Given their natural microwave coupling, we show how Andreev bound states can operate as optical--to--microwave transducers. We illustrate these effects with realistic device parameters. Our results highlight the possibilities in the new field of Andreev optoelectronics.
