Near-Memory Architecture for Threshold-Ordinal Surface-Based Corner Detection of Event Cameras
Hongyang Shang, An Guo, Shuai Dong, Junyi Yang, Ye Ke, Arindam Basu
TL;DR
This work tackles the latency and energy bottlenecks of TOS-based corner detection on high-rate event cameras by introducing a near-memory computing architecture (NM-TOS). The design uses read-write decoupled 8T SRAM, a pipelined patch-update flow, and dynamic voltage/frequency scaling to accelerate per-event TOS updates while reducing power. Hardware modules (MO/CMP) and a DVFS-enabled peripheral ecosystem yield up to 24.7× latency reductions and up to 6.6× energy savings, with only minor AUC degradation on standard EBC datasets under low-voltage operation. The approach enables real-time, edge-hosted corner detection for surveillance, robotics, and autonomous systems with high-resolution event streams, illustrating robust performance under hardware non-idealities.
Abstract
Event-based Cameras (EBCs) are widely utilized in surveillance and autonomous driving applications due to their high speed and low power consumption. Corners are essential low-level features in event-driven computer vision, and novel algorithms utilizing event-based representations, such as Threshold-Ordinal Surface (TOS), have been developed for corner detection. However, the implementation of these algorithms on resource-constrained edge devices is hindered by significant latency, undermining the advantages of EBCs. To address this challenge, a near-memory architecture for efficient TOS updates (NM-TOS) is proposed. This architecture employs a read-write decoupled 8T SRAM cell and optimizes patch update speed through pipelining. Hardware-software co-optimized peripheral circuits and dynamic voltage and frequency scaling (DVFS) enable power and latency reductions. Compared to traditional digital implementations, our architecture reduces latency/energy by 24.7x/1.2x at Vdd = 1.2 V or 1.93x/6.6x at Vdd = 0.6 V based on 65nm CMOS process. Monte Carlo simulations confirm robust circuit operation, demonstrating zero bit error rate at operating voltages above 0.62 V, with only 0.2% at 0.61 V and 2.5% at 0.6 V. Corner detection evaluation using precision-recall area under curve (AUC) metrics reveals minor AUC reductions of 0.027 and 0.015 at 0.6 V for two popular EBC datasets.
