Interatomic spin-orbit interaction in a $p$-orbital helical atomic chain
Takemitsu Kato, Yasuhiro Utsumi, Ora Entin-Wohlman, Amnon Aharony
TL;DR
This work investigates the origin of chirality-induced spin selectivity (CISS) by deriving an inter-atomic spin-orbit interaction (SOI) in a $p$-orbital helical chain with intra-atomic SOI. By a Schrieffer-Wolff transformation, the authors show that curvature-driven orbital mixing and a second-order $oldsymbol π$-$oldsymbol σ$ process generate a Rashba-like inter-atomic SOI in the $σ$-band, together with long-range second-nearest-neighbor hoppings; the strength scales as $rac{2 ext{(curvature)} imes J imes ext{Δ}_{ m so}}{K_{m t}}$. In the zero-torsion limit, the Bloch Hamiltonian for the $σ$-band is analytically diagonalized, revealing a spin splitting proportional to $rac{4 J_- ext{Δ}_{ m so}}{K_{m t}} rac{k}{N}$, while the $π$-band retains helical states. Finite torsion, as in DNA-like geometries, modifies the splitting and can reduce the effect, highlighting geometry as a tunable factor in CISS. Overall, the model provides a compact, analytically tractable framework linking curvature, crystal-field strength, and SOI to spin-selective transport in chiral systems.
Abstract
We derive the interatomic spin-orbit interaction (SOI) from a helical atomic chain composed of $p$-orbitals with intra-atomic SOI, which exhibits a helical state--a potential origin of the chiral-induced spin selectivity (CISS) effect. In this model, a strong crystal field in the tangential direction of the helix leads to the formation of energetically separated $σ$- and $π$-bands. In the second-order process, a spin in the $σ$-orbital virtually hops to the $π$-orbital, flips its direction due to intra-atomic SOI, and then hops back to the $σ$-orbital in the neighboring atom due to the misalignment of $p$-orbitals along the helix. This process induces an interatomic SOI in the $σ$-band, which takes the form of a Rashba-type SOI generated by an electric field normal to the helical axis. The magnitude of the SOI is proportional to the curvature, the hopping energy, the intra-atomic SOI energy, and inversely proportional to the crystal field strength. The second-order process also induces long-range second-nearest-neighbor hoppings. We analytically derive the spin-split band structure in the zero-torsion limit.
