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Single Color Center Spin Coherence revealed in Optically Detected Magnetic Resonance of an Ensemble of Silicon Vacancies in SiC

David A. Fehr, Hannes Kraus, Corey J. Cochrane, Michael E. Flatté

Abstract

We present a quantitative theory for simulating optically detected magnetic resonance (ODMR) measurements of optically-active spin centers using steady-state Lindblad equations. We apply the theory to an experimental ODMR spectrum associated with the negatively-charged silicon vacancy V2 center in 6H-SiC, showing that spin Hamiltonian parameters, optical transition rates, and even coherence times may be extracted, with values consistent with recent literature. Notably the $T_2$ spin coherence time is measurable, not just the $T_2^*$ dephasing time. Furthermore, we simulate the ODMR spectra of a V2 center in isotopically-purified 6H-SiC, and predict an order-of-magnitude narrowing of some, but not all spectral lines compared with natural abundance samples.

Single Color Center Spin Coherence revealed in Optically Detected Magnetic Resonance of an Ensemble of Silicon Vacancies in SiC

Abstract

We present a quantitative theory for simulating optically detected magnetic resonance (ODMR) measurements of optically-active spin centers using steady-state Lindblad equations. We apply the theory to an experimental ODMR spectrum associated with the negatively-charged silicon vacancy V2 center in 6H-SiC, showing that spin Hamiltonian parameters, optical transition rates, and even coherence times may be extracted, with values consistent with recent literature. Notably the spin coherence time is measurable, not just the dephasing time. Furthermore, we simulate the ODMR spectra of a V2 center in isotopically-purified 6H-SiC, and predict an order-of-magnitude narrowing of some, but not all spectral lines compared with natural abundance samples.

Paper Structure

This paper contains 8 equations, 3 figures.

Figures (3)

  • Figure 1: (a) ODMR spectrum of the V2 silicon vacancy center in 6H-SiC versus magnetic field with a microwave frequency of 9.4 GHz. The simulated spectra is compared to the measurement in KrausH.2014Rqme. (Inset): The ODMR diagram used in our model including the ground and excited state zero-field splittings ($D_{g,e}$), absorption rates ($k_{a}$), spontaneous emission rates ($k_{e}$), and intersystem crossing rates ($k_{1-4}$). (b) ODMR spectrum of the ground resonances $B_{2\pm}$ and $B_{2i\pm}$. (Insets): Energy level diagrams of the transitions associated with $B_{2\pm}$ and $B_{2i\pm}$.
  • Figure 2: (a) ODMR spectrum of the excited state resonances $B_{2e\pm}$. (Insets): Energy level diagrams of the transitions associated with $B_{2e\pm}$. (a) ODMR spectrum of the ground state half-field resonances $B_{2h\pm}$. (Insets): Energy level diagrams of the transitions associated with $B_{2h\pm}$.
  • Figure 3: (a) The predicted ODMR spectrum of the V2 silicon vacancy center in isotopically-purified and magnetically-homogeneous 6H-SiC versus magnetic field with a microwave frequency of 9.4 GHz. The simulated spectra is compared to the natural abundance measurement in KrausH.2014Rqme for reference. (b) Predicted ODMR spectrum of the ground resonances $B_{2\pm}$ and $B_{2i\pm}$. (b) Predicted ODMR spectrum of the ground state half-field resonances $B_{2h\pm}$.