Exchange interaction in gate-defined quantum dots beyond the Hubbard model
Alexander Willmes, Patrick Bethke, M. Mohamed El Kordy Shehata, George Simion, M. A. Wolfe, Tim Botzem, Robert P. G. McNeil, Julian Ritzmann, Arne Ludwig, Andreas D. Wieck, Dieter Schuh, Dominique Bougeard, Hendrik Bluhm
TL;DR
This work addresses the need for a quantitative description of the exchange coupling $J$ in gate-defined GaAs double quantum dots across a wide detuning range, essential for reliable spin-qubit gate operations. It combines a novel amplitude-frequency (Ramsey+FID) measurement with three theoretical frameworks—3D FC I, 1D FC I with a Coulomb-cutoff length, and an extended Hubbard model that includes excited orbital states—to map $J(\epsilon)$ and extract key parameters. The study finds that 3D FC I captures the full detuning behavior well, while an extended FH model extends the predictive range near the charge transition, and a gauged 1D FC I can reproduce the data with moderate computational effort. These results offer practical guidance for selecting modeling approaches in gate-defined quantum dots and have implications for designing high-fidelity exchange-based qubit operations in GaAs and related materials.
Abstract
A quantitative description of the exchange interaction in quantum dots is relevant for modeling gate operations of spin qubits. By measuring the amplitude and frequency of exchange-driven qubit state oscillations, we measure the detuning dependence of the exchange coupling in a GaAs double quantum dot over three orders of magnitude. Both 1D and 3D full configuration interaction simulations can replicate the observed behavior. Extending a Hubbard model by including excited states increases the range of detuning where it provides a good fit, thus elucidating the underlying physics.
