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Exchange interaction in gate-defined quantum dots beyond the Hubbard model

Alexander Willmes, Patrick Bethke, M. Mohamed El Kordy Shehata, George Simion, M. A. Wolfe, Tim Botzem, Robert P. G. McNeil, Julian Ritzmann, Arne Ludwig, Andreas D. Wieck, Dieter Schuh, Dominique Bougeard, Hendrik Bluhm

TL;DR

This work addresses the need for a quantitative description of the exchange coupling $J$ in gate-defined GaAs double quantum dots across a wide detuning range, essential for reliable spin-qubit gate operations. It combines a novel amplitude-frequency (Ramsey+FID) measurement with three theoretical frameworks—3D FC I, 1D FC I with a Coulomb-cutoff length, and an extended Hubbard model that includes excited orbital states—to map $J(\epsilon)$ and extract key parameters. The study finds that 3D FC I captures the full detuning behavior well, while an extended FH model extends the predictive range near the charge transition, and a gauged 1D FC I can reproduce the data with moderate computational effort. These results offer practical guidance for selecting modeling approaches in gate-defined quantum dots and have implications for designing high-fidelity exchange-based qubit operations in GaAs and related materials.

Abstract

A quantitative description of the exchange interaction in quantum dots is relevant for modeling gate operations of spin qubits. By measuring the amplitude and frequency of exchange-driven qubit state oscillations, we measure the detuning dependence of the exchange coupling in a GaAs double quantum dot over three orders of magnitude. Both 1D and 3D full configuration interaction simulations can replicate the observed behavior. Extending a Hubbard model by including excited states increases the range of detuning where it provides a good fit, thus elucidating the underlying physics.

Exchange interaction in gate-defined quantum dots beyond the Hubbard model

TL;DR

This work addresses the need for a quantitative description of the exchange coupling in gate-defined GaAs double quantum dots across a wide detuning range, essential for reliable spin-qubit gate operations. It combines a novel amplitude-frequency (Ramsey+FID) measurement with three theoretical frameworks—3D FC I, 1D FC I with a Coulomb-cutoff length, and an extended Hubbard model that includes excited orbital states—to map and extract key parameters. The study finds that 3D FC I captures the full detuning behavior well, while an extended FH model extends the predictive range near the charge transition, and a gauged 1D FC I can reproduce the data with moderate computational effort. These results offer practical guidance for selecting modeling approaches in gate-defined quantum dots and have implications for designing high-fidelity exchange-based qubit operations in GaAs and related materials.

Abstract

A quantitative description of the exchange interaction in quantum dots is relevant for modeling gate operations of spin qubits. By measuring the amplitude and frequency of exchange-driven qubit state oscillations, we measure the detuning dependence of the exchange coupling in a GaAs double quantum dot over three orders of magnitude. Both 1D and 3D full configuration interaction simulations can replicate the observed behavior. Extending a Hubbard model by including excited states increases the range of detuning where it provides a good fit, thus elucidating the underlying physics.

Paper Structure

This paper contains 17 sections, 14 equations, 8 figures, 2 tables.

Figures (8)

  • Figure 1: (a) Electron micrograph of an identical device. Red circles indicate the dot positions. Gate voltages $V_i$ can be pulsed to change the double dot state on a nanosecond time scale. Reflectance from a nearby sensor dot in an rf tank circuit senses the double dot charge state. We define the x-axis along the inter-dot direction, the z-axis along the out-of-plane direction and y-axis perpendicular to both. (b) Bloch sphere for the $S$-$T_0$ qubit. Exchange $J$ and nuclear magnetic field gradient $\mathrm{\Delta}B_z$ drive rotations around the $z$-/$x$-axis. A finite $J$ tilts the rotation axis, so that the observed frequency is increased and the oscillation amplitude is decreased. (c) Exchange interaction $J$ measured as a function of detuning $\epsilon^\prime$ using a combination of the Ramsey and combined amplitude-frequency technique. $\epsilon^\prime$ is offset to be zero at the $(2,0)$-$(1,1)$ charge transition. The middle of the $(1,1)$ charge region is situated at approximately $\epsilon^\prime = -15m V$. As expected from symmetry, $J(\epsilon\xspace^\prime)$ levels off to a minimum value in the middle of the $(1,1)$ charge region.
  • Figure 2: (a) Comparison of the measured $J(\epsilon\xspace)$ with the output of the numerical models. The different curves are labeled with the respective tunnel couplings and offset in $J$ for visual clarity. We use the 3D model to gauge the Coulomb-cutoff length $l_c$ of the 1D model to $l_c = 21.85nm$ using the curve with $t=22µeV$ and employ this 1D model to fit the other two measurements. Using the experimentally determined lever arm we find good qualitative agreement between model and experiment. For $t=22µeV$ the potential parameters are $x_0 = 107.5nm$, $V_0 = 1.575m eV$ and a comparison of extracted parameters with the experiment are shown in Tab. \ref{['tab:1dfit']} (for all parameters of other two measurements see Appendix \ref{['sec:supl:other_exchange_fits']}). The detuning axis is referenced to the $(2,0)$-$(1,1)$ charge transition. (b) Common models with parameters extracted from the exact 1D model. The range over which the extended FH model captures the $J(\epsilon\xspace)$ behavior is much extended, especially in the range of low detuning. Inset: Diagram for the additional terms in the extended FH model.
  • Figure A.1: Measured oscillation amplitude as a function of its frequency using the FID pulse for different pulse depths $\epsilon\xspace$ at $t=22µeV$. The two colored traces exemplary show fits of Eq. \ref{['eq:ampfreq']}, which are used to extract $J(\epsilon\xspace)$ shown in figure \ref{['fig:data']}(c) of the main text. The fit range is chosen manually to exclude the noise floor at small $\omega$ and the drop off at large $\omega$, as indicated by the dashed lines
  • Figure B.1: (a) Fit $A\text{cos}(\omega)e^{t/T_2^*}$ to the Ramsey measurement results ($J=91MHz$). Using an exponential decay for the oscillations provides a better fit to the data a Gaussian decay, which may be related to non-ergodicity effects of the system. (b) Pulse sequences used in this work (offset in $\epsilon\xspace$). For the Ramsey sequence $\ket{\uparrow \downarrow}$ is adiabatically prepared and read out to observe $z$-rotations. For the FID sequence a singlet is prepared and rapidly separated to observe $S-T_0$ oscillations.
  • Figure D.1: (a) Pulse sequence for the excited-state tunneling measurement $t_T$. The $\ket{\uparrow\downarrow}$ state is prepared adiabatically and pulsed back rapidly to some detuning where the charge state is read out for $100ns$ to $200ns$, which is short compared to the lifetime of the prepared state. (b) Charge signal of the singlet ground state (blue) and the $\ket{\uparrow\downarrow}$ state (orange) measurement. The width of the transition labeled ${S}$ (${T_0}$) transition gives $t_S$ ($t_T$) while the distance between both transitions corresponds to the singlet-triplet splitting $\Delta_{ST}$. The linear background reflects the direct effect of the gates on the charge sensor.
  • ...and 3 more figures