An activation-relaxation technique study of two-level system impact on internal dissipation using DFT-based moment tensor potential
Renaude Girard, Carl Lévesque, Normand Mousseau, François Schiettekatte
TL;DR
This work investigates atomistic mechanisms of two-level systems (TLS) in amorphous silicon as a source of coating noise in gravitational-wave detectors. It combines a DFT-trained, universal Moment Tensor Potential (MTP) with Activation-Relaxation Technique nouveau (ARTn) to map the energy landscape and identify TLS, and compares results to an empirical Stillinger-Weber model. The study finds a higher TLS density and a shift toward more complex, bond-exchange TLSs with the MTP, while the loss angle predicted by the MTP landscape closely matches experimental dissipation data, outperforming the empirical model. The findings underscore the importance of using accurate, DFT-based potentials to capture the atomistic details of TLS-driven dissipation, informing strategies to mitigate coating noise in gravitational-wave detectors.
Abstract
We use a recently-developed machine-learned Moment Tensor Potential (MTP) trained on data generated with the density functional theory (DFT) and tailored to amorphous silicon coupled with the Activation-Relaxation Technique nouveau (ARTn) to identify and classify two-level systems (TLS). The samples generated using MTP recover experimental results and provide average structural and dissipative properties similar to those obtained with a modified Stillinger-Weber potential, including radial distribution function, defect concentration and internal friction. Atomistic details, however, are significantly different, including the density and type of TLS. In particular, we find that while the density of TLS involving a bond-hopping mechanism is similar for the two potentials, more complex TLSs, such as those involving a Wooten-Winer-Weaire bond exchange, are about twice as common. Analysis also shows that TLSs, for MTP-based models, are mostly isolated and oscillate independently from each other.
